Abstract
Giant bandgap reduction of dilute GaAs1-xNx with nitrogen incorporation makes this material to be very attractive for conversion efficiency increase in multijunction, high efficiency solar cells.
| Original language | American English |
|---|---|
| Pages | 7-8 |
| Number of pages | 2 |
| State | Published - 2000 |
| Event | Addendum to the NCPV Program Review Meeting 2000 - Denver Colorado Duration: 16 Apr 2000 → 19 Apr 2000 |
Conference
| Conference | Addendum to the NCPV Program Review Meeting 2000 |
|---|---|
| City | Denver Colorado |
| Period | 16/04/00 → 19/04/00 |
NREL Publication Number
- NREL/CP-590-29673
Keywords
- amorphous Si
- applications
- cadmium telluride (CdTe) photovoltaic solar cells modules
- components
- concentrators
- copper indium diselenide (CIS)
- crystalline silicon (x-Si) (c-Si)
- manufacturing
- markets
- NCPV
- photovoltaics (PV)
- research and development (R&D)
- systems
- systems integration
- thin films
