Nitrogen-Induced Evolution of GaAs1-xNx Studied by Ballistic Electron Emission Spectroscopy

Research output: Contribution to conferencePaper

Abstract

Giant bandgap reduction of dilute GaAs1-xNx with nitrogen incorporation makes this material to be very attractive for conversion efficiency increase in multijunction, high efficiency solar cells.
Original languageAmerican English
Pages7-8
Number of pages2
StatePublished - 2000
EventAddendum to the NCPV Program Review Meeting 2000 - Denver Colorado
Duration: 16 Apr 200019 Apr 2000

Conference

ConferenceAddendum to the NCPV Program Review Meeting 2000
CityDenver Colorado
Period16/04/0019/04/00

NREL Publication Number

  • NREL/CP-590-29673

Keywords

  • amorphous Si
  • applications
  • cadmium telluride (CdTe) photovoltaic solar cells modules
  • components
  • concentrators
  • copper indium diselenide (CIS)
  • crystalline silicon (x-Si) (c-Si)
  • manufacturing
  • markets
  • NCPV
  • photovoltaics (PV)
  • research and development (R&D)
  • systems
  • systems integration
  • thin films

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