Nitrogen-Induced Increase of the Maximum Electron Concentration in Group III-N-V Alloys

K. Yu, W. Walukiewicz, W. Shan, J. Ager, J. Wu, E. Haller, J. Geisz, D. Friedman, J. Olson

Research output: Contribution to journalArticlepeer-review

81 Scopus Citations


The maximum free-electron concentration is observed to increase dramatically with the nitrogen content (Formula presented) in heavily Se-doped (Formula presented) films. For example, an electron concentration of (Formula presented) was observed at (Formula presented) a value more than 20 times larger than that observed in GaAs films grown under similar conditions. It is shown that the increase is caused by a combination of two effects: (1) a downward shift of the conduction band and (2) an increase of the electron effective mass caused by flattening of the conduction-band minimum. Both these effects are due to modifications to the conduction-band structure caused by an anticrossing interaction of a localized (Formula presented) state and the conduction band of the III-V host.

Original languageAmerican English
Pages (from-to)R13337-R13340
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number20
StatePublished - 2000

NREL Publication Number

  • NREL/JA-520-29076


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