Nitrogen-Induced Increase of the Maximum Electron Concentration in Group III-N-V Alloys

K. Yu; W. Walukiewicz; W. Shan; J. Ager; J. Wu; E. Haller; J. Geisz; D. Friedman; J. Olson

doi:10.1103/PhysRevB.61.R13337

Nitrogen-Induced Increase of the Maximum Electron Concentration in Group III-N-V Alloys

K. Yu, W. Walukiewicz, W. Shan, J. Ager, J. Wu, E. Haller, J. Geisz, D. Friedman, J. Olson

Chemistry and Nanoscience

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Abstract

The maximum free-electron concentration is observed to increase dramatically with the nitrogen content (Formula presented) in heavily Se-doped (Formula presented) films. For example, an electron concentration of (Formula presented) was observed at (Formula presented) a value more than 20 times larger than that observed in GaAs films grown under similar conditions. It is shown that the increase is caused by a combination of two effects: (1) a downward shift of the conduction band and (2) an increase of the electron effective mass caused by flattening of the conduction-band minimum. Both these effects are due to modifications to the conduction-band structure caused by an anticrossing interaction of a localized (Formula presented) state and the conduction band of the III-V host.

Original language	American English
Pages (from-to)	R13337-R13340
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	61
Issue number	20
DOIs	https://doi.org/10.1103/PhysRevB.61.R13337 https://doi.org/10.1103/PhysRevB.61.R13337
State	Published - 2000

NREL Publication Number

NREL/JA-520-29076

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title = "Nitrogen-Induced Increase of the Maximum Electron Concentration in Group III-N-V Alloys",

abstract = "The maximum free-electron concentration is observed to increase dramatically with the nitrogen content (Formula presented) in heavily Se-doped (Formula presented) films. For example, an electron concentration of (Formula presented) was observed at (Formula presented) a value more than 20 times larger than that observed in GaAs films grown under similar conditions. It is shown that the increase is caused by a combination of two effects: (1) a downward shift of the conduction band and (2) an increase of the electron effective mass caused by flattening of the conduction-band minimum. Both these effects are due to modifications to the conduction-band structure caused by an anticrossing interaction of a localized (Formula presented) state and the conduction band of the III-V host.",

author = "K. Yu and W. Walukiewicz and W. Shan and J. Ager and J. Wu and E. Haller and J. Geisz and D. Friedman and J. Olson",

year = "2000",

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Yu, K, Walukiewicz, W, Shan, W, Ager, J, Wu, J, Haller, E, Geisz, J , Friedman, D & Olson, J 2000, 'Nitrogen-Induced Increase of the Maximum Electron Concentration in Group III-N-V Alloys', Physical Review B - Condensed Matter and Materials Physics, vol. 61, no. 20, pp. R13337-R13340. https://doi.org/10.1103/PhysRevB.61.R13337, https://doi.org/10.1103/PhysRevB.61.R13337

TY - JOUR

T1 - Nitrogen-Induced Increase of the Maximum Electron Concentration in Group III-N-V Alloys

AU - Yu, K.

AU - Walukiewicz, W.

AU - Shan, W.

AU - Ager, J.

AU - Wu, J.

AU - Haller, E.

AU - Geisz, J.

AU - Friedman, D.

AU - Olson, J.

PY - 2000

Y1 - 2000

N2 - The maximum free-electron concentration is observed to increase dramatically with the nitrogen content (Formula presented) in heavily Se-doped (Formula presented) films. For example, an electron concentration of (Formula presented) was observed at (Formula presented) a value more than 20 times larger than that observed in GaAs films grown under similar conditions. It is shown that the increase is caused by a combination of two effects: (1) a downward shift of the conduction band and (2) an increase of the electron effective mass caused by flattening of the conduction-band minimum. Both these effects are due to modifications to the conduction-band structure caused by an anticrossing interaction of a localized (Formula presented) state and the conduction band of the III-V host.

AB - The maximum free-electron concentration is observed to increase dramatically with the nitrogen content (Formula presented) in heavily Se-doped (Formula presented) films. For example, an electron concentration of (Formula presented) was observed at (Formula presented) a value more than 20 times larger than that observed in GaAs films grown under similar conditions. It is shown that the increase is caused by a combination of two effects: (1) a downward shift of the conduction band and (2) an increase of the electron effective mass caused by flattening of the conduction-band minimum. Both these effects are due to modifications to the conduction-band structure caused by an anticrossing interaction of a localized (Formula presented) state and the conduction band of the III-V host.

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U2 - 10.1103/PhysRevB.61.R13337

DO - 10.1103/PhysRevB.61.R13337

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AN - SCOPUS:0001243688

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SP - R13337-R13340

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 20

ER -

Nitrogen-Induced Increase of the Maximum Electron Concentration in Group III-N-V Alloys

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