Nitrogen-Induced Levels in GaAs1-xNx Studied with Raman Scattering

Hyeonsik M. Cheong; Yong Zhang; Angelo Mascarenhas; John F. Geisz

doi:10.1103/PhysRevB.61.13687

Nitrogen-Induced Levels in GaAs1-xNx Studied with Raman Scattering

Hyeonsik M. Cheong, Yong Zhang, Angelo Mascarenhas, John F. Geisz

Chemistry and Nanoscience

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

73 Scopus Citations

Abstract

Resonant Raman scattering is used to study the nature of the recently discovered nitrogen-induced level (Formula presented) located in the conduction band of (Formula presented) Our data demonstrate that the (Formula presented) state is derived from the nitrogen-induced (Formula presented)-(Formula presented) mixing of the bulk GaAs states and that it is not an isolated nitrogen impurity level. A broadening of the GaAs-like longitudinal-optical phonon line and an enhancement of the transverse-optical phonon line is observed near resonance, which is interpreted as being due to resonance with strongly localized states.

Original language	American English
Pages (from-to)	13687-13690
Number of pages	4
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	61
Issue number	20
DOIs	https://doi.org/10.1103/PhysRevB.61.13687 https://doi.org/10.1103/PhysRevB.61.13687
State	Published - 2000

NREL Publication Number

NREL/JA-590-29074

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abstract = "Resonant Raman scattering is used to study the nature of the recently discovered nitrogen-induced level (Formula presented) located in the conduction band of (Formula presented) Our data demonstrate that the (Formula presented) state is derived from the nitrogen-induced (Formula presented)-(Formula presented) mixing of the bulk GaAs states and that it is not an isolated nitrogen impurity level. A broadening of the GaAs-like longitudinal-optical phonon line and an enhancement of the transverse-optical phonon line is observed near resonance, which is interpreted as being due to resonance with strongly localized states.",

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AU - Geisz, John F.

PY - 2000

Y1 - 2000

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AB - Resonant Raman scattering is used to study the nature of the recently discovered nitrogen-induced level (Formula presented) located in the conduction band of (Formula presented) Our data demonstrate that the (Formula presented) state is derived from the nitrogen-induced (Formula presented)-(Formula presented) mixing of the bulk GaAs states and that it is not an isolated nitrogen impurity level. A broadening of the GaAs-like longitudinal-optical phonon line and an enhancement of the transverse-optical phonon line is observed near resonance, which is interpreted as being due to resonance with strongly localized states.

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JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

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ER -

Nitrogen-Induced Levels in GaAs1-xNx Studied with Raman Scattering

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