Nitrogen-Induced Levels in GaAs1-xNx Studied with Raman Scattering

Hyeonsik M. Cheong, Yong Zhang, Angelo Mascarenhas, John F. Geisz

Research output: Contribution to journalArticlepeer-review

73 Scopus Citations


Resonant Raman scattering is used to study the nature of the recently discovered nitrogen-induced level (Formula presented) located in the conduction band of (Formula presented) Our data demonstrate that the (Formula presented) state is derived from the nitrogen-induced (Formula presented)-(Formula presented) mixing of the bulk GaAs states and that it is not an isolated nitrogen impurity level. A broadening of the GaAs-like longitudinal-optical phonon line and an enhancement of the transverse-optical phonon line is observed near resonance, which is interpreted as being due to resonance with strongly localized states.

Original languageAmerican English
Pages (from-to)13687-13690
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number20
StatePublished - 2000

NREL Publication Number

  • NREL/JA-590-29074


Dive into the research topics of 'Nitrogen-Induced Levels in GaAs1-xNx Studied with Raman Scattering'. Together they form a unique fingerprint.

Cite this