Nitrogen Solubility and Nitrogen Induced Defect Complexes in Epitaxially Grown GaAsN

Research output: Contribution to conferencePaper

Original languageAmerican English
PagesPart II: 1493-1494
Number of pages2
StatePublished - 2001
Event25th International Conference on the Physics of Semiconductors - Osaka, Japan
Duration: 17 Sep 200022 Sep 2000

Conference

Conference25th International Conference on the Physics of Semiconductors
CityOsaka, Japan
Period17/09/0022/09/00

NREL Publication Number

  • NREL/CP-590-30987

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