NMR Investigation of H Cluster Configurations in A-Si:H

NMR Investigation of H Cluster Configurations in A-Si:H

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Abstract

In this work the characteristics of hydrogen clusters in hot filament assisted CVD and conventional glow discharge a-Si:H films are discussed. Computer simulations of the observed free-induction decays of the 1H NMR signals indicate that the distribution of the nearest-neighbor distances between H atoms in the H clusters is quite narrow in hot filament assisted CVD a-Si:H whereas the distributionis larger in glow discharge a-Si:H. This is clear evidence of improved structural order in hot filament assisted CVD a-Si:H. The relaxed hydrogenated divacancy and multi-vacancy models reproduce the main features of the observed free-induction decay in hot-wire a-Si:H very well. Computer simulations of the multiple-quantum NMR spectra indicate that a relaxed hydrogenated divacancy configurationleads to good agreement with experimental observations in device quality glow discharge a-Si:H. Results of simulations based on other H cluster configurations are also discussed. These results provide restrictions on the possible models for H clusters in a-Si:H.

Original language	American English
Pages	159-164
Number of pages	6
State	Published - 1997
Event	Amorphous and Microcrystalline Silicon Technology 1997: Materials Research Society Symposium - San Francisco, California Duration: 31 Mar 1997 → 4 Apr 1997

Conference

Conference	Amorphous and Microcrystalline Silicon Technology 1997: Materials Research Society Symposium
City	San Francisco, California
Period	31/03/97 → 4/04/97

Bibliographical note

Work performed by University of North Carolina, Chapel Hill, North Carolina

NREL Publication Number

NREL/CP-520-24546

Cite this

@conference{f102d8bdc79e4917af70fe90813a768f,

title = "NMR Investigation of H Cluster Configurations in A-Si:H",

abstract = "In this work the characteristics of hydrogen clusters in hot filament assisted CVD and conventional glow discharge a-Si:H films are discussed. Computer simulations of the observed free-induction decays of the 1H NMR signals indicate that the distribution of the nearest-neighbor distances between H atoms in the H clusters is quite narrow in hot filament assisted CVD a-Si:H whereas the distributionis larger in glow discharge a-Si:H. This is clear evidence of improved structural order in hot filament assisted CVD a-Si:H. The relaxed hydrogenated divacancy and multi-vacancy models reproduce the main features of the observed free-induction decay in hot-wire a-Si:H very well. Computer simulations of the multiple-quantum NMR spectra indicate that a relaxed hydrogenated divacancy configurationleads to good agreement with experimental observations in device quality glow discharge a-Si:H. Results of simulations based on other H cluster configurations are also discussed. These results provide restrictions on the possible models for H clusters in a-Si:H.",

author = "NREL",

note = "Work performed by University of North Carolina, Chapel Hill, North Carolina; Amorphous and Microcrystalline Silicon Technology 1997: Materials Research Society Symposium ; Conference date: 31-03-1997 Through 04-04-1997",

year = "1997",

language = "American English",

pages = "159--164",

}

TY - CONF

T1 - NMR Investigation of H Cluster Configurations in A-Si:H

AU - NREL, null

N1 - Work performed by University of North Carolina, Chapel Hill, North Carolina

PY - 1997

Y1 - 1997

N2 - In this work the characteristics of hydrogen clusters in hot filament assisted CVD and conventional glow discharge a-Si:H films are discussed. Computer simulations of the observed free-induction decays of the 1H NMR signals indicate that the distribution of the nearest-neighbor distances between H atoms in the H clusters is quite narrow in hot filament assisted CVD a-Si:H whereas the distributionis larger in glow discharge a-Si:H. This is clear evidence of improved structural order in hot filament assisted CVD a-Si:H. The relaxed hydrogenated divacancy and multi-vacancy models reproduce the main features of the observed free-induction decay in hot-wire a-Si:H very well. Computer simulations of the multiple-quantum NMR spectra indicate that a relaxed hydrogenated divacancy configurationleads to good agreement with experimental observations in device quality glow discharge a-Si:H. Results of simulations based on other H cluster configurations are also discussed. These results provide restrictions on the possible models for H clusters in a-Si:H.

AB - In this work the characteristics of hydrogen clusters in hot filament assisted CVD and conventional glow discharge a-Si:H films are discussed. Computer simulations of the observed free-induction decays of the 1H NMR signals indicate that the distribution of the nearest-neighbor distances between H atoms in the H clusters is quite narrow in hot filament assisted CVD a-Si:H whereas the distributionis larger in glow discharge a-Si:H. This is clear evidence of improved structural order in hot filament assisted CVD a-Si:H. The relaxed hydrogenated divacancy and multi-vacancy models reproduce the main features of the observed free-induction decay in hot-wire a-Si:H very well. Computer simulations of the multiple-quantum NMR spectra indicate that a relaxed hydrogenated divacancy configurationleads to good agreement with experimental observations in device quality glow discharge a-Si:H. Results of simulations based on other H cluster configurations are also discussed. These results provide restrictions on the possible models for H clusters in a-Si:H.

M3 - Paper

SP - 159

EP - 164

T2 - Amorphous and Microcrystalline Silicon Technology 1997: Materials Research Society Symposium

Y2 - 31 March 1997 through 4 April 1997

ER -

NMR Investigation of H Cluster Configurations in A-Si:H

Abstract

Conference

Bibliographical note

NREL Publication Number

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