Non-Equilibrium Deposition of Phase Pure Cu2O Thin Films at Reduced Growth Temperature

Archana Subramaniyan; John D. Perkins; Ryan P. O'Hayre; Stephan Lany; Vladan Stevanovic; David S. Ginley; Andriy Zakutayev

doi:10.1063/1.4865457

Non-Equilibrium Deposition of Phase Pure Cu2O Thin Films at Reduced Growth Temperature

Archana Subramaniyan, John D. Perkins, Ryan P. O'Hayre, Stephan Lany, Vladan Stevanovic, David S. Ginley, Andriy Zakutayev

Research output: Contribution to journal › Article › peer-review

59 Scopus Citations

Abstract

Cuprous oxide (Cu₂O) is actively studied as a prototypical material for energy conversion and electronic applications. Here we reduce the growth temperature of phase pure Cu₂O thin films to 300-°C by intentionally controlling solely the kinetic parameter (total chamber pressure, P_tot) at fixed thermodynamic condition (0.25 mTorr pO₂). A strong non-monotonic effect of P_tot on Cu-O phase formation is found using high-throughput combinatorial-pulsed laser deposition. This discovery creates new opportunities for the growth of Cu₂O devices with low thermal budget and illustrates the importance of kinetic effects for the synthesis of metastable materials with useful properties.

Original language	American English
Article number	022105
Number of pages	6
Journal	APL Materials
Volume	2
Issue number	2
DOIs	https://doi.org/10.1063/1.4865457 https://doi.org/10.1063/1.4865457
State	Published - Feb 2014

NREL Publication Number

NREL/JA-5900-61366

Access to Document

Cite this

@article{1fc965122faa4c94804f049c3f86ba3a,

title = "Non-Equilibrium Deposition of Phase Pure Cu2O Thin Films at Reduced Growth Temperature",

abstract = "Cuprous oxide (Cu2O) is actively studied as a prototypical material for energy conversion and electronic applications. Here we reduce the growth temperature of phase pure Cu2O thin films to 300-°C by intentionally controlling solely the kinetic parameter (total chamber pressure, Ptot) at fixed thermodynamic condition (0.25 mTorr pO2). A strong non-monotonic effect of Ptot on Cu-O phase formation is found using high-throughput combinatorial-pulsed laser deposition. This discovery creates new opportunities for the growth of Cu2O devices with low thermal budget and illustrates the importance of kinetic effects for the synthesis of metastable materials with useful properties.",

author = "Archana Subramaniyan and Perkins, {John D.} and O'Hayre, {Ryan P.} and Stephan Lany and Vladan Stevanovic and Ginley, {David S.} and Andriy Zakutayev",

year = "2014",

month = feb,

doi = "10.1063/1.4865457",

language = "American English",

volume = "2",

journal = "APL Materials",

issn = "2166-532X",

publisher = "American Institute of Physics",

number = "2",

}

TY - JOUR

T1 - Non-Equilibrium Deposition of Phase Pure Cu2O Thin Films at Reduced Growth Temperature

AU - Subramaniyan, Archana

AU - Perkins, John D.

AU - O'Hayre, Ryan P.

AU - Lany, Stephan

AU - Stevanovic, Vladan

AU - Ginley, David S.

AU - Zakutayev, Andriy

PY - 2014/2

Y1 - 2014/2

N2 - Cuprous oxide (Cu2O) is actively studied as a prototypical material for energy conversion and electronic applications. Here we reduce the growth temperature of phase pure Cu2O thin films to 300-°C by intentionally controlling solely the kinetic parameter (total chamber pressure, Ptot) at fixed thermodynamic condition (0.25 mTorr pO2). A strong non-monotonic effect of Ptot on Cu-O phase formation is found using high-throughput combinatorial-pulsed laser deposition. This discovery creates new opportunities for the growth of Cu2O devices with low thermal budget and illustrates the importance of kinetic effects for the synthesis of metastable materials with useful properties.

AB - Cuprous oxide (Cu2O) is actively studied as a prototypical material for energy conversion and electronic applications. Here we reduce the growth temperature of phase pure Cu2O thin films to 300-°C by intentionally controlling solely the kinetic parameter (total chamber pressure, Ptot) at fixed thermodynamic condition (0.25 mTorr pO2). A strong non-monotonic effect of Ptot on Cu-O phase formation is found using high-throughput combinatorial-pulsed laser deposition. This discovery creates new opportunities for the growth of Cu2O devices with low thermal budget and illustrates the importance of kinetic effects for the synthesis of metastable materials with useful properties.

UR - http://www.scopus.com/inward/record.url?scp=84900018477&partnerID=8YFLogxK

U2 - 10.1063/1.4865457

DO - 10.1063/1.4865457

M3 - Article

AN - SCOPUS:84900018477

SN - 2166-532X

VL - 2

JO - APL Materials

JF - APL Materials

IS - 2

M1 - 022105

ER -

Non-Equilibrium Deposition of Phase Pure Cu2O Thin Films at Reduced Growth Temperature

Abstract

NREL Publication Number

Access to Document

Other files and links

Fingerprint

Cite this