Nonuniform Charge Collection in SiOx-Based Passivated-Contact Silicon Solar Cells

Harvey Guthrey; Abhijit S. Kale; William Nemeth; Matthew Page; Sumit Agarwal; David Young; Mowafak Al-Jassim; Paul Stradins

doi:10.1109/PVSC40753.2019.8981371

Nonuniform Charge Collection in SiOx-Based Passivated-Contact Silicon Solar Cells

Harvey Guthrey, Abhijit S. Kale, William Nemeth, Matthew Page, Sumit Agarwal, David Young, Mowafak Al-Jassim, Paul Stradins

Research output: Contribution to conference › Paper › peer-review

1 Scopus Citations

Abstract

In this contribution, we report on the charge-collection characteristics of silicon photovoltaic devices using passivated contacts based on the c-Si/SiO_x/poly-Si structure. Using electron-beam induced current (EBIC) imaging in plan-view and cross-section orientations, we find that charge collection in a device with a 1.5-nm-thick SiO_x layer is fairly uniform in the p-n junction region and does not appear to be influenced by pyramidal surface texture. In contrast, a device with a 2.2-nm-thick oxide layer shows significant spatial variation in the charge-collection signal. The apexes of the pyramids exhibit reduced EBIC signal whereas the valleys between adjacent pyramids show the strongest collection. Our results indicate that charge collection in c-Si/SiO_x/poly-Si structures can be influenced by both the properties of the SiO_x layer and surface texture.

Original language	American English
Pages	2749-2752
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC40753.2019.8981371 https://doi.org/10.1109/PVSC40753.2019.8981371
State	Published - Jun 2019
Event	46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States Duration: 16 Jun 2019 → 21 Jun 2019

Conference

Conference	46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Country/Territory	United States
City	Chicago
Period	16/06/19 → 21/06/19

Bibliographical note

Publisher Copyright:
© 2019 IEEE.

NREL Publication Number

NREL/CP-5K00-73123

Keywords

EBIC
oxide passivation
pinholes
pyramid texture
Silicon solar cell

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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Guthrey, H., Kale, A. S., Nemeth, W., Page, M., Agarwal, S., Young, D., Al-Jassim, M., & Stradins, P. (2019). Nonuniform Charge Collection in SiOx-Based Passivated-Contact Silicon Solar Cells. 2749-2752. Paper presented at 46th IEEE Photovoltaic Specialists Conference, PVSC 2019, Chicago, United States. https://doi.org/10.1109/PVSC40753.2019.8981371, https://doi.org/10.1109/PVSC40753.2019.8981371

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title = "Nonuniform Charge Collection in SiOx-Based Passivated-Contact Silicon Solar Cells",

abstract = "In this contribution, we report on the charge-collection characteristics of silicon photovoltaic devices using passivated contacts based on the c-Si/SiOx/poly-Si structure. Using electron-beam induced current (EBIC) imaging in plan-view and cross-section orientations, we find that charge collection in a device with a 1.5-nm-thick SiOx layer is fairly uniform in the p-n junction region and does not appear to be influenced by pyramidal surface texture. In contrast, a device with a 2.2-nm-thick oxide layer shows significant spatial variation in the charge-collection signal. The apexes of the pyramids exhibit reduced EBIC signal whereas the valleys between adjacent pyramids show the strongest collection. Our results indicate that charge collection in c-Si/SiOx/poly-Si structures can be influenced by both the properties of the SiOx layer and surface texture.",

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author = "Harvey Guthrey and Kale, {Abhijit S.} and William Nemeth and Matthew Page and Sumit Agarwal and David Young and Mowafak Al-Jassim and Paul Stradins",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 46th IEEE Photovoltaic Specialists Conference, PVSC 2019 ; Conference date: 16-06-2019 Through 21-06-2019",

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doi = "10.1109/PVSC40753.2019.8981371",

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Guthrey, H, Kale, AS, Nemeth, W , Page, M, Agarwal, S, Young, D , Al-Jassim, M & Stradins, P 2019, 'Nonuniform Charge Collection in SiOx-Based Passivated-Contact Silicon Solar Cells', Paper presented at 46th IEEE Photovoltaic Specialists Conference, PVSC 2019, Chicago, United States, 16/06/19 - 21/06/19 pp. 2749-2752. https://doi.org/10.1109/PVSC40753.2019.8981371, https://doi.org/10.1109/PVSC40753.2019.8981371

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T1 - Nonuniform Charge Collection in SiOx-Based Passivated-Contact Silicon Solar Cells

AU - Guthrey, Harvey

AU - Kale, Abhijit S.

AU - Nemeth, William

AU - Page, Matthew

AU - Agarwal, Sumit

AU - Young, David

AU - Al-Jassim, Mowafak

AU - Stradins, Paul

PY - 2019/6

Y1 - 2019/6

N2 - In this contribution, we report on the charge-collection characteristics of silicon photovoltaic devices using passivated contacts based on the c-Si/SiOx/poly-Si structure. Using electron-beam induced current (EBIC) imaging in plan-view and cross-section orientations, we find that charge collection in a device with a 1.5-nm-thick SiOx layer is fairly uniform in the p-n junction region and does not appear to be influenced by pyramidal surface texture. In contrast, a device with a 2.2-nm-thick oxide layer shows significant spatial variation in the charge-collection signal. The apexes of the pyramids exhibit reduced EBIC signal whereas the valleys between adjacent pyramids show the strongest collection. Our results indicate that charge collection in c-Si/SiOx/poly-Si structures can be influenced by both the properties of the SiOx layer and surface texture.

AB - In this contribution, we report on the charge-collection characteristics of silicon photovoltaic devices using passivated contacts based on the c-Si/SiOx/poly-Si structure. Using electron-beam induced current (EBIC) imaging in plan-view and cross-section orientations, we find that charge collection in a device with a 1.5-nm-thick SiOx layer is fairly uniform in the p-n junction region and does not appear to be influenced by pyramidal surface texture. In contrast, a device with a 2.2-nm-thick oxide layer shows significant spatial variation in the charge-collection signal. The apexes of the pyramids exhibit reduced EBIC signal whereas the valleys between adjacent pyramids show the strongest collection. Our results indicate that charge collection in c-Si/SiOx/poly-Si structures can be influenced by both the properties of the SiOx layer and surface texture.

KW - EBIC

KW - oxide passivation

KW - pinholes

KW - pyramid texture

KW - Silicon solar cell

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M3 - Paper

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T2 - 46th IEEE Photovoltaic Specialists Conference, PVSC 2019

Y2 - 16 June 2019 through 21 June 2019

ER -

Nonuniform Charge Collection in SiOx-Based Passivated-Contact Silicon Solar Cells

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

UN SDGs

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