Nonuniform Charge Collection in SiOx-Based Passivated-Contact Silicon Solar Cells

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In this contribution, we report on the charge-collection characteristics of silicon photovoltaic devices using passivated contacts based on the c-Si/SiOx/poly-Si structure. Using electron-beam induced current (EBIC) imaging in plan-view and cross-section orientations, we find that charge collection in a device with a 1.5-nm-thick SiOx layer is fairly uniform in the p-n junction region and does not appear to be influenced by pyramidal surface texture. In contrast, a device with a 2.2-nm-thick oxide layer shows significant spatial variation in the charge-collection signal. The apexes of the pyramids exhibit reduced EBIC signal whereas the valleys between adjacent pyramids show the strongest collection. Our results indicate that charge collection in c-Si/SiOx/poly-Si structures can be influenced by both the properties of the SiOx layer and surface texture.

Original languageAmerican English
Number of pages4
StatePublished - Jun 2019
Event46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States
Duration: 16 Jun 201921 Jun 2019


Conference46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Country/TerritoryUnited States

Bibliographical note

Publisher Copyright:
© 2019 IEEE.

NREL Publication Number

  • NREL/CP-5K00-73123


  • EBIC
  • oxide passivation
  • pinholes
  • pyramid texture
  • Silicon solar cell


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