Novel Biexcitonic, Non-Radiative Electron-Hole Recombination Mechanism and Its Application in Hydrogenated Silicon Semiconductors

Novel Biexcitonic, Non-Radiative Electron-Hole Recombination Mechanism and Its Application in Hydrogenated Silicon Semiconductors

Chemistry and Nanoscience

Research output: Contribution to conference › Paper

Abstract

A biexciton model is proposed for non-radiative electron hole (e-h) recombination in semiconductors based on first-principles calculations . In hydrogenated Si, the trapping of photoexcited e-h pairs drives large structural reconfiguration, accompanied by the crossing of an electron and a hole level near midgap. This level crossing is the key to a fast and non-radiative recombination, without theslow multi-phonon emission process.

Original language	American English
Pages	Part 1: 184-185
Number of pages	2
State	Published - 2001
Event	25th International Conference on the Physics of Semiconductors - Osaka, Japan Duration: 17 Sep 2000 → 22 Sep 2000

Conference

Conference	25th International Conference on the Physics of Semiconductors
City	Osaka, Japan
Period	17/09/00 → 22/09/00

NREL Publication Number

NREL/CP-590-30986

Cite this

@conference{aba1543e81fb4e47b3eb8eea46437581,

title = "Novel Biexcitonic, Non-Radiative Electron-Hole Recombination Mechanism and Its Application in Hydrogenated Silicon Semiconductors",

abstract = "A biexciton model is proposed for non-radiative electron hole (e-h) recombination in semiconductors based on first-principles calculations . In hydrogenated Si, the trapping of photoexcited e-h pairs drives large structural reconfiguration, accompanied by the crossing of an electron and a hole level near midgap. This level crossing is the key to a fast and non-radiative recombination, without theslow multi-phonon emission process.",

author = "NREL",

year = "2001",

language = "American English",

pages = "Part 1: 184--185",

note = "25th International Conference on the Physics of Semiconductors ; Conference date: 17-09-2000 Through 22-09-2000",

}

TY - CONF

T1 - Novel Biexcitonic, Non-Radiative Electron-Hole Recombination Mechanism and Its Application in Hydrogenated Silicon Semiconductors

AU - NREL, null

PY - 2001

Y1 - 2001

N2 - A biexciton model is proposed for non-radiative electron hole (e-h) recombination in semiconductors based on first-principles calculations . In hydrogenated Si, the trapping of photoexcited e-h pairs drives large structural reconfiguration, accompanied by the crossing of an electron and a hole level near midgap. This level crossing is the key to a fast and non-radiative recombination, without theslow multi-phonon emission process.

AB - A biexciton model is proposed for non-radiative electron hole (e-h) recombination in semiconductors based on first-principles calculations . In hydrogenated Si, the trapping of photoexcited e-h pairs drives large structural reconfiguration, accompanied by the crossing of an electron and a hole level near midgap. This level crossing is the key to a fast and non-radiative recombination, without theslow multi-phonon emission process.

M3 - Paper

SP - Part 1: 184-185

T2 - 25th International Conference on the Physics of Semiconductors

Y2 - 17 September 2000 through 22 September 2000

ER -

Novel Biexcitonic, Non-Radiative Electron-Hole Recombination Mechanism and Its Application in Hydrogenated Silicon Semiconductors

Abstract

Conference

NREL Publication Number

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Cite this