Novel High Efficiency Photovoltaic Devices Based on the III-N Material System: Final Technical Report, 7 December 2005 - 29 August 2008

NREL, Martha Symko-Davies (NREL Technical Monitor)

Research output: NRELSubcontract Report

Abstract

The research shows that InGaN material system can be used to realize high-efficiency solar cells, making contributions to growth, modeling, understanding of loss mechanisms, and process optimization.
Original languageAmerican English
Number of pages15
StatePublished - 2008

Bibliographical note

Work performed by the University of Delaware, Newark, Delaware

NREL Publication Number

  • NREL/SR-520-44186

Keywords

  • bandgap
  • devices
  • high efficiency
  • INGAN
  • ohmic contact
  • open-circuit voltages
  • optimization
  • phase separation
  • PV
  • solar cells

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