Abstract
The research shows that InGaN material system can be used to realize high-efficiency solar cells, making contributions to growth, modeling, understanding of loss mechanisms, and process optimization.
Original language | American English |
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Number of pages | 15 |
State | Published - 2008 |
Bibliographical note
Work performed by the University of Delaware, Newark, DelawareNREL Publication Number
- NREL/SR-520-44186
Keywords
- bandgap
- devices
- high efficiency
- INGAN
- ohmic contact
- open-circuit voltages
- optimization
- phase separation
- PV
- solar cells