Nucleation of High-Quality GaP on Si Through V-Groove Si Substrates

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3 Scopus Citations


High quality III-Vs on Si are a promising candidate for high efficiency, cost-effective tandem solar cells due to the superior optoelectronic properties of III-Vs and low cost of Si. In recent years, progress towards the integration of high-quality, monolithically-grown III-Vs on Si has been made through careful control of the GaP on Si nucleation step [1]. A variety of pretreatments have successfully been used to modify the surface reconstruction of the Si to prevent the formation of antiphase domains (APDs) [2]- [5]. This has led to promising III-V/Si multijuction solar cell results, with efficiencies now exceeding 20% [6], [7].

Original languageAmerican English
Number of pages2
StatePublished - 14 Jun 2020
Event47th IEEE Photovoltaic Specialists Conference, PVSC 2020 - Calgary, Canada
Duration: 15 Jun 202021 Aug 2020


Conference47th IEEE Photovoltaic Specialists Conference, PVSC 2020

Bibliographical note

Publisher Copyright:
© 2020 IEEE.

NREL Publication Number

  • NREL/CP-5900-75915


  • heteroepitaxy
  • III-Vs
  • nanopatterning
  • Si tandem solar cells


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