Nucleation of High-Quality GaP on Si Through V-Groove Si Substrates

Theresa Saenz; William McMahon; Andrew Norman; Craig Perkins; Jeramy Zimmerman; Emily Warren

doi:10.1109/PVSC45281.2020.9300926

Nucleation of High-Quality GaP on Si Through V-Groove Si Substrates

Theresa Saenz, William McMahon, Andrew Norman, Craig Perkins, Jeramy Zimmerman, Emily Warren

Colorado School of Mines

Research output: Contribution to conference › Paper › peer-review

3 Scopus Citations

Abstract

High quality III-Vs on Si are a promising candidate for high efficiency, cost-effective tandem solar cells due to the superior optoelectronic properties of III-Vs and low cost of Si. In recent years, progress towards the integration of high-quality, monolithically-grown III-Vs on Si has been made through careful control of the GaP on Si nucleation step [1]. A variety of pretreatments have successfully been used to modify the surface reconstruction of the Si to prevent the formation of antiphase domains (APDs) [2]- [5]. This has led to promising III-V/Si multijuction solar cell results, with efficiencies now exceeding 20% [6], [7].

Original language	American English
Pages	352-353
Number of pages	2
DOIs	https://doi.org/10.1109/PVSC45281.2020.9300926 https://doi.org/10.1109/PVSC45281.2020.9300926
State	Published - 14 Jun 2020
Event	47th IEEE Photovoltaic Specialists Conference, PVSC 2020 - Calgary, Canada Duration: 15 Jun 2020 → 21 Aug 2020

Conference

Conference	47th IEEE Photovoltaic Specialists Conference, PVSC 2020
Country/Territory	Canada
City	Calgary
Period	15/06/20 → 21/08/20

Bibliographical note

Publisher Copyright:
© 2020 IEEE.

NREL Publication Number

NREL/CP-5900-75915

Keywords

heteroepitaxy
III-Vs
nanopatterning
Si tandem solar cells

Access to Document

Cite this

@conference{21a9b61e03d64143895a3d454e4cf267,

title = "Nucleation of High-Quality GaP on Si Through V-Groove Si Substrates",

abstract = "High quality III-Vs on Si are a promising candidate for high efficiency, cost-effective tandem solar cells due to the superior optoelectronic properties of III-Vs and low cost of Si. In recent years, progress towards the integration of high-quality, monolithically-grown III-Vs on Si has been made through careful control of the GaP on Si nucleation step [1]. A variety of pretreatments have successfully been used to modify the surface reconstruction of the Si to prevent the formation of antiphase domains (APDs) [2]- [5]. This has led to promising III-V/Si multijuction solar cell results, with efficiencies now exceeding 20% [6], [7].",

keywords = "heteroepitaxy, III-Vs, nanopatterning, Si tandem solar cells",

author = "Theresa Saenz and William McMahon and Andrew Norman and Craig Perkins and Jeramy Zimmerman and Emily Warren",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 47th IEEE Photovoltaic Specialists Conference, PVSC 2020 ; Conference date: 15-06-2020 Through 21-08-2020",

year = "2020",

month = jun,

day = "14",

doi = "10.1109/PVSC45281.2020.9300926",

language = "American English",

pages = "352--353",

}

TY - CONF

T1 - Nucleation of High-Quality GaP on Si Through V-Groove Si Substrates

AU - Saenz, Theresa

AU - McMahon, William

AU - Norman, Andrew

AU - Perkins, Craig

AU - Zimmerman, Jeramy

AU - Warren, Emily

PY - 2020/6/14

Y1 - 2020/6/14

N2 - High quality III-Vs on Si are a promising candidate for high efficiency, cost-effective tandem solar cells due to the superior optoelectronic properties of III-Vs and low cost of Si. In recent years, progress towards the integration of high-quality, monolithically-grown III-Vs on Si has been made through careful control of the GaP on Si nucleation step [1]. A variety of pretreatments have successfully been used to modify the surface reconstruction of the Si to prevent the formation of antiphase domains (APDs) [2]- [5]. This has led to promising III-V/Si multijuction solar cell results, with efficiencies now exceeding 20% [6], [7].

AB - High quality III-Vs on Si are a promising candidate for high efficiency, cost-effective tandem solar cells due to the superior optoelectronic properties of III-Vs and low cost of Si. In recent years, progress towards the integration of high-quality, monolithically-grown III-Vs on Si has been made through careful control of the GaP on Si nucleation step [1]. A variety of pretreatments have successfully been used to modify the surface reconstruction of the Si to prevent the formation of antiphase domains (APDs) [2]- [5]. This has led to promising III-V/Si multijuction solar cell results, with efficiencies now exceeding 20% [6], [7].

KW - heteroepitaxy

KW - III-Vs

KW - nanopatterning

KW - Si tandem solar cells

UR - http://www.scopus.com/inward/record.url?scp=85099534414&partnerID=8YFLogxK

U2 - 10.1109/PVSC45281.2020.9300926

DO - 10.1109/PVSC45281.2020.9300926

M3 - Paper

AN - SCOPUS:85099534414

SP - 352

EP - 353

T2 - 47th IEEE Photovoltaic Specialists Conference, PVSC 2020

Y2 - 15 June 2020 through 21 August 2020

ER -

Nucleation of High-Quality GaP on Si Through V-Groove Si Substrates

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

Access to Document

Other files and links

Fingerprint

Cite this