Numerical Simulation of the Influence of the Gap State of a-Si:H on the Characteristics of a-Si:H p-i-n/OLED Coupling Device

Numerical Simulation of the Influence of the Gap State of a-Si:H on the Characteristics of a-Si:H p-i-n/OLED Coupling Device

Research output: Contribution to conference › Paper

Original language	American English
Pages	223-228
Number of pages	6
State	Published - 2003
Event	Amorphous and Nanocrystalline Silicon-Based Films 2003: Materials Research Society Symposium - San Francisco, California Duration: 22 Apr 2003 → 25 Apr 2003

Conference

Conference	Amorphous and Nanocrystalline Silicon-Based Films 2003: Materials Research Society Symposium
City	San Francisco, California
Period	22/04/03 → 25/04/03

NREL Publication Number

NREL/CP-520-36071

Cite this

@conference{0731188da9794f7f9fd4b7d57526ce90,

title = "Numerical Simulation of the Influence of the Gap State of a-Si:H on the Characteristics of a-Si:H p-i-n/OLED Coupling Device",

author = "NREL",

year = "2003",

language = "American English",

pages = "223--228",

note = "Amorphous and Nanocrystalline Silicon-Based Films 2003: Materials Research Society Symposium ; Conference date: 22-04-2003 Through 25-04-2003",

}