Abstract
We present initial time-resolved photoluminescence (TRPL) simulations in graded CdSexTe1-e thin-film solar cells to quantify the front-interface recombination velocity, Sint,front. Our model includes several composition dependences: bandgap energy, absorption coefficient, electron affinity, and carrier lifetime. Cathodoluminescence spectrum imaging measurements on bevels provide an estimate of the bandgap and the CdSexTe1-x alloy composition through the absorber thickness. TRPL decays are simulated as a function of the laser power, Sint,front, front-interface band offset, and bulk Shockley-Read-Hall lifetime. We find the impact of Sintf,ront on the PL decay increases as the band offset shifts from a 'spike' to a 'cliff'. Recombination rate analysis shows that back-interface recombination could potentially dictate the later part of the TRPL decay 't2' in high-lifetime CdSexTe1-x cells. We briefly discuss ongoing work to determine TRPL measurement conditions that maximize sensitivity to Sitnt,front.
Original language | American English |
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Pages | 2062-2065 |
Number of pages | 4 |
DOIs | |
State | Published - 14 Jun 2020 |
Event | 47th IEEE Photovoltaic Specialists Conference, PVSC 2020 - Calgary, Canada Duration: 15 Jun 2020 → 21 Aug 2020 |
Conference
Conference | 47th IEEE Photovoltaic Specialists Conference, PVSC 2020 |
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Country/Territory | Canada |
City | Calgary |
Period | 15/06/20 → 21/08/20 |
Bibliographical note
Publisher Copyright:© 2020 IEEE.
NREL Publication Number
- NREL/CP-5K00-75931
Keywords
- CdTe solar cells
- interface recombination
- time-resolved photoluminescence