Numerical Simulations of Transient Photoconductance Decay

Research output: Contribution to conferencePaper


Transient photoconductance decay (PCD) in ingots or wafers has been numerically simulated by a finite-element method (FEM). We examined two types of light sources for carrier injection in transient PCD measurements. Large discrepancies between the widely used asymptotic approximation and the FEM simulations of wafers were seen, and an empirical fitting of the FEM results suggests that the effectof surface recombination; velocity on wafer lifetime may be much smaller, although the diffusion-limited surface lifetime remains the same. A single-exponential decay representing overall quality of a multicrystalline wafer is obtained even though the wafer comprises of grains with different lifetimes. If the grain sizes are much smaller than the carrier diffusion length, and if no surface orgrain boundary recombination is present, then the inverse effective lifetime is found to be the volume-weighted sum of the inverse local lifetimes.
Original languageAmerican English
Number of pages4
StatePublished - 1997
EventTwenty Sixth IEEE Photovoltaic Specialists Conference - Anaheim, California
Duration: 29 Sep 19973 Oct 1997


ConferenceTwenty Sixth IEEE Photovoltaic Specialists Conference
CityAnaheim, California

Bibliographical note

For preprint version, including full text online document, see NREL/CP-450-22957

NREL Publication Number

  • NREL/CP-590-25054


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