Observation of Band Alignment Transition in InAs/GaAsSb Quantum Dots by Photoluminescence

Keun Yong Ban; Darius Kuciauskas; Stephen P. Bremner; Christiana B. Honsberg

doi:10.1063/1.4717766

Observation of Band Alignment Transition in InAs/GaAsSb Quantum Dots by Photoluminescence

Keun Yong Ban, Darius Kuciauskas, Stephen P. Bremner, Christiana B. Honsberg

Chemistry and Nanoscience

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Abstract

The band alignment of InAs quantum dots (QDs) embedded in GaAsSb barriers with various Sb compositions is investigated by photoluminescence (PL) measurements. InAs/GaAsSb samples with 13 and 15 Sb compositions show distinct differences in emission spectra as the PL excitation power increases. Whilst no discernible shift is seen for the 13 sample, a blue-shift of PL spectra following a 1/3 exponent of the excitation power is observed for the 15 sample suggesting a transition from a type I to type II band alignment. Time-resolved PL data show a significant increase in carrier lifetime as the Sb composition increases between 13 and 15 implying that the transformation from a type I to type II band alignment occurs between 13 and 15 Sb compositions. These results taken together lead to the conclusion that a zero valence band offset (VBO) can be achieved for the InAs/GaAsSb system in the vicinity of 14 Sb composition.

Original language	American English
Article number	104302
Number of pages	4
Journal	Journal of Applied Physics
Volume	111
Issue number	10
DOIs	https://doi.org/10.1063/1.4717766 https://doi.org/10.1063/1.4717766
State	Published - 15 May 2012

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NREL/JA-5200-55918

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@article{e92cfe43f8d443b88b5d44f415f14d25,

title = "Observation of Band Alignment Transition in InAs/GaAsSb Quantum Dots by Photoluminescence",

abstract = "The band alignment of InAs quantum dots (QDs) embedded in GaAsSb barriers with various Sb compositions is investigated by photoluminescence (PL) measurements. InAs/GaAsSb samples with 13 and 15 Sb compositions show distinct differences in emission spectra as the PL excitation power increases. Whilst no discernible shift is seen for the 13 sample, a blue-shift of PL spectra following a 1/3 exponent of the excitation power is observed for the 15 sample suggesting a transition from a type I to type II band alignment. Time-resolved PL data show a significant increase in carrier lifetime as the Sb composition increases between 13 and 15 implying that the transformation from a type I to type II band alignment occurs between 13 and 15 Sb compositions. These results taken together lead to the conclusion that a zero valence band offset (VBO) can be achieved for the InAs/GaAsSb system in the vicinity of 14 Sb composition.",

author = "Ban, {Keun Yong} and Darius Kuciauskas and Bremner, {Stephen P.} and Honsberg, {Christiana B.}",

year = "2012",

month = may,

day = "15",

doi = "10.1063/1.4717766",

language = "American English",

volume = "111",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - Observation of Band Alignment Transition in InAs/GaAsSb Quantum Dots by Photoluminescence

AU - Ban, Keun Yong

AU - Kuciauskas, Darius

AU - Bremner, Stephen P.

AU - Honsberg, Christiana B.

PY - 2012/5/15

Y1 - 2012/5/15

N2 - The band alignment of InAs quantum dots (QDs) embedded in GaAsSb barriers with various Sb compositions is investigated by photoluminescence (PL) measurements. InAs/GaAsSb samples with 13 and 15 Sb compositions show distinct differences in emission spectra as the PL excitation power increases. Whilst no discernible shift is seen for the 13 sample, a blue-shift of PL spectra following a 1/3 exponent of the excitation power is observed for the 15 sample suggesting a transition from a type I to type II band alignment. Time-resolved PL data show a significant increase in carrier lifetime as the Sb composition increases between 13 and 15 implying that the transformation from a type I to type II band alignment occurs between 13 and 15 Sb compositions. These results taken together lead to the conclusion that a zero valence band offset (VBO) can be achieved for the InAs/GaAsSb system in the vicinity of 14 Sb composition.

AB - The band alignment of InAs quantum dots (QDs) embedded in GaAsSb barriers with various Sb compositions is investigated by photoluminescence (PL) measurements. InAs/GaAsSb samples with 13 and 15 Sb compositions show distinct differences in emission spectra as the PL excitation power increases. Whilst no discernible shift is seen for the 13 sample, a blue-shift of PL spectra following a 1/3 exponent of the excitation power is observed for the 15 sample suggesting a transition from a type I to type II band alignment. Time-resolved PL data show a significant increase in carrier lifetime as the Sb composition increases between 13 and 15 implying that the transformation from a type I to type II band alignment occurs between 13 and 15 Sb compositions. These results taken together lead to the conclusion that a zero valence band offset (VBO) can be achieved for the InAs/GaAsSb system in the vicinity of 14 Sb composition.

UR - http://www.scopus.com/inward/record.url?scp=84862138637&partnerID=8YFLogxK

U2 - 10.1063/1.4717766

DO - 10.1063/1.4717766

M3 - Article

AN - SCOPUS:84862138637

SN - 0021-8979

VL - 111

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

M1 - 104302

ER -

Observation of Band Alignment Transition in InAs/GaAsSb Quantum Dots by Photoluminescence

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