Observation of Improved Structural Ordering in Low H Content, Hot Wire Deposited a-Si:H

Research output: Contribution to conferencePaper

Abstract

We present the results of X-ray diffraction measurements on a series of device quality hot wire (HW) deposited a-Si:H films in which we vary only the substrate temperature of the growing film, which decreases the bonded film H content in a systematic fashion. By increasing the substrate temperature to approximately 375 degrees C, where we deposit our low H content (CH) HW films which exhibit areduced Staebler-Wronski effect, the width of the first peak in the X-ray diffraction pattern narrows noticeable. We interpret this narrowing to be the first indication of improved medium range ordering in our low CH, device quality HW a-Si:H. We note in addition that measurements of the bond angle deviation, obtained from Raman measurements of the half width of the Si-Si TO phonon mode on thesame samples, do not show this same evidence of improved ordering as the substrate temperature is increased. We discuss these differences in the context of sample annealing experiments designed to effuse H from the region of the sample probed by the surface sensitive Raman technique, while leaving the bulk of the material, which is sampled by the X-ray beam, largely unaffected.
Original languageAmerican English
Pages657-662
Number of pages6
StatePublished - 1997
EventAmorphous and Microcrystalline Silicon Technology 1997: Materials Research Society Symposium - San Francisco, California
Duration: 31 Mar 19974 Apr 1997

Conference

ConferenceAmorphous and Microcrystalline Silicon Technology 1997: Materials Research Society Symposium
CitySan Francisco, California
Period31/03/974/04/97

NREL Publication Number

  • NREL/CP-520-24535

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