Observation of Large Optical Anisotropy and Valence Band Splitting in AlInAs Self-Assembled Lateral Quantum Wells

S. Francoeur; M. C. Hanna; A. G. Norman; A. Mascarenhas

doi:10.1063/1.1432754

Observation of Large Optical Anisotropy and Valence Band Splitting in AlInAs Self-Assembled Lateral Quantum Wells

S. Francoeur, M. C. Hanna, A. G. Norman, A. Mascarenhas

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

17 Scopus Citations

Abstract

Self-assembled lateral quantum wells in alloys of AlInAs, epitaxially deposited by metal-organic chemical vapor deposition on InP, are studied by transmission electron microscopy, modulation spectroscopy, and photoluminescence. Under particular growth conditions, the growth of a homogeneous layer results in the spontaneous self-assembly of a sequence of quantum wells with quantization axes oriented along the [110] direction. With respect to a homogeneous alloy of similar average composition, the band gap reduction observed is as large as 360 meV. A polarization anisotropy exceeding 90% is observed for the lowest energy transition and a large valence band splitting of 139 meV separates the heavy- and light-hole-like valence bands.

Original language	American English
Pages (from-to)	243-245
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	2
DOIs	https://doi.org/10.1063/1.1432754 https://doi.org/10.1063/1.1432754
State	Published - 2002

NREL Publication Number

NREL/JA-590-32044

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@article{e04699588cf3469c903c8d3ed0aa10e3,

title = "Observation of Large Optical Anisotropy and Valence Band Splitting in AlInAs Self-Assembled Lateral Quantum Wells",

abstract = "Self-assembled lateral quantum wells in alloys of AlInAs, epitaxially deposited by metal-organic chemical vapor deposition on InP, are studied by transmission electron microscopy, modulation spectroscopy, and photoluminescence. Under particular growth conditions, the growth of a homogeneous layer results in the spontaneous self-assembly of a sequence of quantum wells with quantization axes oriented along the [110] direction. With respect to a homogeneous alloy of similar average composition, the band gap reduction observed is as large as 360 meV. A polarization anisotropy exceeding 90% is observed for the lowest energy transition and a large valence band splitting of 139 meV separates the heavy- and light-hole-like valence bands.",

author = "S. Francoeur and Hanna, {M. C.} and Norman, {A. G.} and A. Mascarenhas",

year = "2002",

doi = "10.1063/1.1432754",

language = "American English",

volume = "80",

pages = "243--245",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "2",

}

TY - JOUR

T1 - Observation of Large Optical Anisotropy and Valence Band Splitting in AlInAs Self-Assembled Lateral Quantum Wells

AU - Francoeur, S.

AU - Hanna, M. C.

AU - Norman, A. G.

AU - Mascarenhas, A.

PY - 2002

Y1 - 2002

N2 - Self-assembled lateral quantum wells in alloys of AlInAs, epitaxially deposited by metal-organic chemical vapor deposition on InP, are studied by transmission electron microscopy, modulation spectroscopy, and photoluminescence. Under particular growth conditions, the growth of a homogeneous layer results in the spontaneous self-assembly of a sequence of quantum wells with quantization axes oriented along the [110] direction. With respect to a homogeneous alloy of similar average composition, the band gap reduction observed is as large as 360 meV. A polarization anisotropy exceeding 90% is observed for the lowest energy transition and a large valence band splitting of 139 meV separates the heavy- and light-hole-like valence bands.

AB - Self-assembled lateral quantum wells in alloys of AlInAs, epitaxially deposited by metal-organic chemical vapor deposition on InP, are studied by transmission electron microscopy, modulation spectroscopy, and photoluminescence. Under particular growth conditions, the growth of a homogeneous layer results in the spontaneous self-assembly of a sequence of quantum wells with quantization axes oriented along the [110] direction. With respect to a homogeneous alloy of similar average composition, the band gap reduction observed is as large as 360 meV. A polarization anisotropy exceeding 90% is observed for the lowest energy transition and a large valence band splitting of 139 meV separates the heavy- and light-hole-like valence bands.

UR - http://www.scopus.com/inward/record.url?scp=79956039334&partnerID=8YFLogxK

U2 - 10.1063/1.1432754

DO - 10.1063/1.1432754

M3 - Article

AN - SCOPUS:79956039334

SN - 0003-6951

VL - 80

SP - 243

EP - 245

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

ER -

Observation of Large Optical Anisotropy and Valence Band Splitting in AlInAs Self-Assembled Lateral Quantum Wells

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