Observation of retarded recombination in charge-separation structures

R. K. Ahrenkiel, D. Friedman, W. K. Metzger, M. Page, J. Dashdorj

Research output: Contribution to conferencePaperpeer-review

2 Scopus Citations

Abstract

Measurement of recombination and minority-carrier lifetimes has become a very common activity in current semiconductor technology. The two primary measurement techniques are based on photoconductive decay (PCD) and time-resolved photoluminescence (TRPL). The measurement of the "true" lifetime depends on the carriers being confined to a given spatial region of a diagnostic device. When internal electric fields exist that separate the charges, the measured value does not represent the real minority-carrier lifetime. In these cases, the measured quantity is a function of the true lifetime and the measurement technique.

Original languageEnglish
Pages205-210
Number of pages6
DOIs
StatePublished - 2004
EventProgress in Compound Semiconductor Materials III - Electronic and Opoelectronic Applications - Boston, MA, United States
Duration: 1 Dec 20034 Dec 2003

Conference

ConferenceProgress in Compound Semiconductor Materials III - Electronic and Opoelectronic Applications
Country/TerritoryUnited States
CityBoston, MA
Period1/12/034/12/03

NREL Publication Number

  • NREL/CP-520-35312

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