Abstract
Measurement of recombination and minority-carrier lifetimes has become a very common activity in current semiconductor technology. The two primary measurement techniques are based on photoconductive decay (PCD) and time-resolved photoluminescence (TRPL). The measurement of the "true" lifetime depends on the carriers being confined to a given spatial region of a diagnostic device. When internal electric fields exist that separate the charges, the measured value does not represent the real minority-carrier lifetime. In these cases, the measured quantity is a function of the true lifetime and the measurement technique.
Original language | English |
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Pages | 205-210 |
Number of pages | 6 |
DOIs | |
State | Published - 2004 |
Event | Progress in Compound Semiconductor Materials III - Electronic and Opoelectronic Applications - Boston, MA, United States Duration: 1 Dec 2003 → 4 Dec 2003 |
Conference
Conference | Progress in Compound Semiconductor Materials III - Electronic and Opoelectronic Applications |
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Country/Territory | United States |
City | Boston, MA |
Period | 1/12/03 → 4/12/03 |
NREL Publication Number
- NREL/CP-520-35312