OMVPE Growth of CdTe on InSb Substrates

Research output: Contribution to journal › Article

Original language	American English
Pages (from-to)	165-168
Number of pages	4
Journal	Journal of Electronic Materials
Volume	15
Issue number	3
DOIs	https://doi.org/10.1007/BF02655331
State	Published - 1986

Work performed by Electrical, Computer, and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, New York

NREL Publication Number

@article{78e241ef90a34c4abd5ae969272dce4c,

title = "OMVPE Growth of CdTe on InSb Substrates",

author = "NREL",

note = "Work performed by Electrical, Computer, and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, New York",

year = "1986",

doi = "10.1007/BF02655331",

language = "American English",

volume = "15",

pages = "165--168",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "3",

}

TY - JOUR

T1 - OMVPE Growth of CdTe on InSb Substrates

AU - NREL, null

N1 - Work performed by Electrical, Computer, and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, New York

PY - 1986

Y1 - 1986

U2 - 10.1007/BF02655331

DO - 10.1007/BF02655331

M3 - Article

SN - 0361-5235

VL - 15

SP - 165

EP - 168

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 3

ER -