Abstract
We compare the properties of a-SiC:H films deposited using SiH4/CH4 and SiF4/H2/CH4 gas mixtures. We focus on structural inhomogeneities in SiH4/CH4 deposited films as a possible cause for the low photoresponse compared to device quality a-Si:H, and show how they can be sharply reduced using F-containing gas mixtures. Preliminary transport and g(E) measurements indicate the promise of this new approach.
Original language | American English |
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Pages (from-to) | 861-864 |
Number of pages | 4 |
Journal | Journal of Non-Crystalline Solids |
Volume | 77-78 |
Issue number | PART 2 |
DOIs | |
State | Published - 1985 |
Bibliographical note
Work performed by Solar Energy Research Institute, Golden, Colorado, and Colorado School of Mines, Physics Department, Golden, ColoradoNREL Publication Number
- ACNR/JA-212-6858