On the Differences between a-SiC:H Films Deposited with and without Fluorine

A. H. Mahan, D. L. Williamson, M. Ruth, P. Raboisson

Research output: Contribution to journalArticlepeer-review

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Abstract

We compare the properties of a-SiC:H films deposited using SiH4/CH4 and SiF4/H2/CH4 gas mixtures. We focus on structural inhomogeneities in SiH4/CH4 deposited films as a possible cause for the low photoresponse compared to device quality a-Si:H, and show how they can be sharply reduced using F-containing gas mixtures. Preliminary transport and g(E) measurements indicate the promise of this new approach.

Original languageAmerican English
Pages (from-to)861-864
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume77-78
Issue numberPART 2
DOIs
StatePublished - 1985

Bibliographical note

Work performed by Solar Energy Research Institute, Golden, Colorado, and Colorado School of Mines, Physics Department, Golden, Colorado

NREL Publication Number

  • ACNR/JA-212-6858

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