On the Effect of Ramp Rate in Damage Accumulation of the CPV Die-Attach: Preprint

Research output: Contribution to conferencePaper


It is commonly understood that thermal cycling at high temperature ramp rates may activate unrepresentative failure mechanisms. Increasing the temperature ramp rate of thermal cycling, however, could dramatically reduce the test time required to achieve an equivalent amount of thermal fatigue damage, thereby reducing overall test time. Therefore, the effect of temperature ramp rate on physicaldamage in the CPV die-attach is investigated. Finite Element Model (FEM) simulations of thermal fatigue and thermal cycling experiments are made to determine if the amount of damage calculated results in a corresponding amount of physical damage measured to the die-attach for a variety of fast temperature ramp rates. Preliminary experimental results are in good agreement with simulations andreinforce the potential of increasing temperature ramp rates. Characterization of the microstructure and resulting fatigue crack in the die-attach suggest a similar failure mechanism across all ramp rates tested.
Original languageAmerican English
Number of pages8
StatePublished - 2012
Event2012 IEEE Photovoltaic Specialists Conference - Austin, Texas
Duration: 3 Jun 20128 Jun 2012


Conference2012 IEEE Photovoltaic Specialists Conference
CityAustin, Texas

NREL Publication Number

  • NREL/CP-5200-54092


  • materials reliability
  • photovoltaic cells
  • reliability theory
  • soldering


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