On the Effect of the Film Hydrogen Content and Deposition Type on the Grain Nucleation and Grain Growth During Crystallization of a-Si:H Films: Preprint

On the Effect of the Film Hydrogen Content and Deposition Type on the Grain Nucleation and Grain Growth During Crystallization of a-Si:H Films: Preprint

Research output: Contribution to conference › Paper

Abstract

We report the effect of the initial film hydrogen content (CH) on the crystallization kinetics, crystallite nucleation rate and grain growth rate when HWCVD and PECVD a-Si:H films are crystallized by annealing at 600..deg..C. For the HWCVD films, both the incubation time and crystallization time decrease, and the full width at half maximum (FWHM) of the XRD (111) peak decreases with decreasingfilm CH. However, other sources of XRD line broadening exist in such materials in addition to crystallite size, including the density of crystallite defects. To address these issues, TEM measurements have also been performed on a-Si:H films deposited directly onto TEM grids.

Original language	American English
Number of pages	6
State	Published - 2006
Event	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC-4) - Waikoloa, Hawaii Duration: 7 May 2006 → 12 May 2006

Conference

Conference	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC-4)
City	Waikoloa, Hawaii
Period	7/05/06 → 12/05/06

NREL Publication Number

NREL/CP-520-39901

Keywords

crystallite nucleation rate
crystallization kinetics
film hydrogen content
full width at half maximum (FWHM)
grain growth rate
PV
thin films

Access to Document

https://www.nrel.gov/docs/fy06osti/39901.pdf

Cite this

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title = "On the Effect of the Film Hydrogen Content and Deposition Type on the Grain Nucleation and Grain Growth During Crystallization of a-Si:H Films: Preprint",

abstract = "We report the effect of the initial film hydrogen content (CH) on the crystallization kinetics, crystallite nucleation rate and grain growth rate when HWCVD and PECVD a-Si:H films are crystallized by annealing at 600..deg..C. For the HWCVD films, both the incubation time and crystallization time decrease, and the full width at half maximum (FWHM) of the XRD (111) peak decreases with decreasingfilm CH. However, other sources of XRD line broadening exist in such materials in addition to crystallite size, including the density of crystallite defects. To address these issues, TEM measurements have also been performed on a-Si:H films deposited directly onto TEM grids.",

keywords = "crystallite nucleation rate, crystallization kinetics, film hydrogen content, full width at half maximum (FWHM), grain growth rate, PV, thin films",

author = "NREL",

year = "2006",

language = "American English",

note = "2006 IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC-4) ; Conference date: 07-05-2006 Through 12-05-2006",

}

TY - CONF

T1 - On the Effect of the Film Hydrogen Content and Deposition Type on the Grain Nucleation and Grain Growth During Crystallization of a-Si:H Films: Preprint

AU - NREL, null

PY - 2006

Y1 - 2006

N2 - We report the effect of the initial film hydrogen content (CH) on the crystallization kinetics, crystallite nucleation rate and grain growth rate when HWCVD and PECVD a-Si:H films are crystallized by annealing at 600..deg..C. For the HWCVD films, both the incubation time and crystallization time decrease, and the full width at half maximum (FWHM) of the XRD (111) peak decreases with decreasingfilm CH. However, other sources of XRD line broadening exist in such materials in addition to crystallite size, including the density of crystallite defects. To address these issues, TEM measurements have also been performed on a-Si:H films deposited directly onto TEM grids.

AB - We report the effect of the initial film hydrogen content (CH) on the crystallization kinetics, crystallite nucleation rate and grain growth rate when HWCVD and PECVD a-Si:H films are crystallized by annealing at 600..deg..C. For the HWCVD films, both the incubation time and crystallization time decrease, and the full width at half maximum (FWHM) of the XRD (111) peak decreases with decreasingfilm CH. However, other sources of XRD line broadening exist in such materials in addition to crystallite size, including the density of crystallite defects. To address these issues, TEM measurements have also been performed on a-Si:H films deposited directly onto TEM grids.

KW - crystallite nucleation rate

KW - crystallization kinetics

KW - film hydrogen content

KW - full width at half maximum (FWHM)

KW - grain growth rate

KW - PV

KW - thin films

M3 - Paper

T2 - 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC-4)

Y2 - 7 May 2006 through 12 May 2006

ER -

On the Effect of the Film Hydrogen Content and Deposition Type on the Grain Nucleation and Grain Growth During Crystallization of a-Si:H Films: Preprint

Abstract

Conference

NREL Publication Number

Keywords

Access to Document

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Cite this