On the Existence of Si-C Double Bonded Graphene-Like Layers

Muhammad N. Huda, Yanfa Yan, Mowafak M. Al-Jassim

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43 Scopus Citations


Upon analyzing an earlier experimental study by density-functional theory we have shown that graphene-like SiC layers can exist. We found that, for a particular stacking sequence, Si{double bond, long}C double bond was responsible for the much larger interlayer distances observed in synthesized multi-walled SiC nanotubes. The Si/C ratios in SiC layers determine the extent of interlayer distances and bonding nature. It has been also shown that for some intermediate ratios of Si:C and/or with other stacking sequences, a collapse of SiC layers to tetrahedrally bonded system is possible. We have argued that these synthesized Si{double bond, long}C double-bonded multi-wall silicon-carbide nanotubes may provide a pathway for future realization of SiC graphene-like materials.

Original languageAmerican English
Pages (from-to)255-258
Number of pages4
JournalChemical Physics Letters
Issue number4-6
StatePublished - 2009

NREL Publication Number

  • NREL/JA-520-46376


  • basic sciences
  • materials science
  • nanomaterials


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