On the Role of Na and Modifications to Cu(In,Ga)Se2 Absorber Materials Using Thin-MF (M=Na, K, Cs) Precursor Layers

Research output: Contribution to conferencePaper

Abstract

The growth and characterization of Cu(In,Ga)Se2 polycrystalline thin films under the presence of thin-MF (M=Na, K, Cs) precursor layers is presented. Some electrical, structural, and electronic absorber properties; due to the presence of such Group Ia impurities are quantified along with their influence in device performance. We present a growth model for the role of Na in Cu(In,Ga)Se2 thatattributes the enhancements in; electrical conductivity and photovoltaic device performance to the extinction of a finite number of donor states (i.e., InCu ) at the bulk and grain-boundary regions.
Original languageAmerican English
Number of pages5
StatePublished - 1997
Event26th IEEE PVSC - Anaheim, California
Duration: 1 Oct 19971 Oct 1997

Conference

Conference26th IEEE PVSC
CityAnaheim, California
Period1/10/971/10/97

NREL Publication Number

  • NREL/CP-520-22945

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