Abstract
The growth and characterization of Cu(In,Ga)Se2 polycrystalline thin films under the presence of thin-MF (M=Na, K, Cs) precursor layers is presented. Some electrical, structural, and electronic absorber properties; due to the presence of such Group Ia impurities are quantified along with their influence in device performance. We present a growth model for the role of Na in Cu(In,Ga)Se2 thatattributes the enhancements in; electrical conductivity and photovoltaic device performance to the extinction of a finite number of donor states (i.e., InCu ) at the bulk and grain-boundary regions.
Original language | American English |
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Number of pages | 5 |
State | Published - 1997 |
Event | 26th IEEE PVSC - Anaheim, California Duration: 1 Oct 1997 → 1 Oct 1997 |
Conference
Conference | 26th IEEE PVSC |
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City | Anaheim, California |
Period | 1/10/97 → 1/10/97 |
NREL Publication Number
- NREL/CP-520-22945