On the Role of Na and Modifications to Cu(In,Ga)Se2 Absorber Materials Using Thin-MF (M=Na, K, Cs) Precursor Layers

    Research output: Contribution to conferencePaper

    Abstract

    The growth and characterization of Cu(In,Ga)Se2 polycrystalline thin films under the presence of thin-MF (M=Na, K, Cs) precursor layers is presented. Some electrical, structural, and electronic absorber properties; due to the presence of such Group Ia impurities are quantified along with their influence in device performance. We present a growth model for the role of Na in Cu(In,Ga)Se2 thatattributes the enhancements in; electrical conductivity and photovoltaic device performance to the extinction of a finite number of donor states (i.e., InCu ) at the bulk and grain-boundary regions.
    Original languageAmerican English
    Number of pages5
    StatePublished - 1997
    Event26th IEEE PVSC - Anaheim, California
    Duration: 1 Oct 19971 Oct 1997

    Conference

    Conference26th IEEE PVSC
    CityAnaheim, California
    Period1/10/971/10/97

    NREL Publication Number

    • NREL/CP-520-22945

    Fingerprint

    Dive into the research topics of 'On the Role of Na and Modifications to Cu(In,Ga)Se2 Absorber Materials Using Thin-MF (M=Na, K, Cs) Precursor Layers'. Together they form a unique fingerprint.

    Cite this