One-Particle and Excitonic Band Structure in Cubic Boron Arsenide: Article No. 2300156

Swagata Acharya, Dimitar Pashov, Mikhail Katsnelson, Mark van Schilfgaarde

Research output: Contribution to journalArticlepeer-review


Cubic BAs has received recent attention for its large electron and hole mobilities and large thermal conductivity. This is a rare and much desired combination in semiconductor industry: commercial semiconductors typically have high electron mobilities, or hole mobilities, or large thermal conductivities, but not all of them together. Herein, predictions from an advanced self-consistent many-body perturbative theory are reported and it is shown that with respect to one-particle properties, BAs is strikingly similar to Si. There are some important differences, notably there is an unusually small variation in the valence band masses. With respect to two-particle properties, significant differences with Si appear. The excitonic spectrum for both q = 0 and finite q is reported, and it is shown that while the direct gap in cubic BAs is about 4 eV, dark excitons can be observed down to about approximately 1.5 eV, which may play a crucial role in application of BAs in optoelectronics.
Original languageAmerican English
Number of pages4
JournalPhysica Status Solidi - Rapid Research Letters
Issue number1
StatePublished - 2024

NREL Publication Number

  • NREL/JA-5K00-86395


  • dark excitons
  • isotropic hole masses
  • Luttinger parameters
  • optoelectronics


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