Open-Circuit Voltage Decay - Measures of Amorphous Silicon Material Stability and Module Degradation

doi:10.1016/0379-6787(88)90084-1

Open-Circuit Voltage Decay - Measures of Amorphous Silicon Material Stability and Module Degradation

Research output: Contribution to journal › Article

Original language	American English
Pages (from-to)	321-328
Number of pages	8
Journal	Solar Cells
Volume	24
Issue number	3-4
DOIs	https://doi.org/10.1016/0379-6787(88)90084-1
State	Published - 1988

Bibliographical note

Work performed by Department of Electrical and Computer Engineering, University of Notre Dame, Notre Dame, Indiana, and Solar Energy Research Institute Golden, Colorado

NREL Publication Number

ACNR/JA-213-10518

Access to Document

10.1016/0379-6787(88)90084-1

Cite this

@article{88a293b9aa8a4bbca0fa756f7a18df8c,

title = "Open-Circuit Voltage Decay - Measures of Amorphous Silicon Material Stability and Module Degradation",

author = "NREL",

note = "Work performed by Department of Electrical and Computer Engineering, University of Notre Dame, Notre Dame, Indiana, and Solar Energy Research Institute Golden, Colorado",

year = "1988",

doi = "10.1016/0379-6787(88)90084-1",

language = "American English",

volume = "24",

pages = "321--328",

journal = "Solar Cells",

issn = "0379-6787",

publisher = "Elsevier BV",

number = "3-4",

}

TY - JOUR

T1 - Open-Circuit Voltage Decay - Measures of Amorphous Silicon Material Stability and Module Degradation

AU - NREL, null

N1 - Work performed by Department of Electrical and Computer Engineering, University of Notre Dame, Notre Dame, Indiana, and Solar Energy Research Institute Golden, Colorado

PY - 1988

Y1 - 1988

U2 - 10.1016/0379-6787(88)90084-1

DO - 10.1016/0379-6787(88)90084-1

M3 - Article

SN - 0379-6787

VL - 24

SP - 321

EP - 328

JO - Solar Cells

JF - Solar Cells

IS - 3-4

ER -