Abstract
In this work, we developed operando Kelvin probe force microscopy (KPFM) to study the electrostatic potential distribution across perovskite cells under light and forward bias to gain a deeper understanding of device operation physics. As a case study, we selected perovskite cells with a SnO2-based electron-selective layer (ESL), which showed great potential for fabricating high-efficiency, hysteresis-free devices due to the deeper conduction band and higher electron mobility of SnO2. The as-made device showed a main junction at the perovskite/spiro interface. After light soaking and applying forward bias, the junction quality improved, possibly explained by filling trap states at the interfaces and by the perovskite absorber perhaps having a self-poling effect; the main junction is observed at the ESL/perovskite interface. The results are consistent with current-voltage measurements, device performance improves mainly with fill factor enhancement. The operando KPFM results should more closely reflect the real case during current density-voltage measurements or solar cell operation. The operando KPFM technique that we have developed can be a powerful tool to provide a deeper understanding of the device operation mechanism and to further optimize the device.
Original language | American English |
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Pages | 638-641 |
Number of pages | 4 |
DOIs | |
State | Published - Jun 2019 |
Event | 46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States Duration: 16 Jun 2019 → 21 Jun 2019 |
Conference
Conference | 46th IEEE Photovoltaic Specialists Conference, PVSC 2019 |
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Country/Territory | United States |
City | Chicago |
Period | 16/06/19 → 21/06/19 |
Bibliographical note
See NREL/CP-5K00-73109 for preprintNREL Publication Number
- NREL/CP-5K00-76351
Keywords
- fill factor enhancement
- interface
- junction quality
- operando KPFM
- Perovskite