Abstract
Described is an optical probe for use in characterizing surface defects in wafers, such as semiconductor wafers. The optical probe detects laser light reflected from the surface of the wafer within various ranges of angles. Characteristics of defects in the surface of the wafer are determined based on the amount of reflected laser light detected in each of the ranges of angles. Additionally, awafer characterization system is described that includes the described optical probe.
| Original language | American English |
|---|---|
| Patent number | 7,420,669 B2 |
| State | Published - 2008 |
NREL Publication Number
- NREL/PT-520-44168