Abstract
We report the coupled optical and electrical properties of a-IZO films as a function of both the metals composition and the %O2 in the Ar/O 2 sputter gas mix. In particular, a-IZO films with conductivity σ > 2000 S/cm can be grown for a broad range of metals compositions (60 to 85 at.% In) as long as the corresponding optimal oxygen level is used in the deposition. The amount of oxygen required increases with increasing indium content. When too much oxygen is used, the a-IZO remains clear but the conductivity is reduced due to a decreased carrier concentration. Whereas, when too little oxygen is used, the conductivity is reduced due to decreased electron mobility and there is a concurrent increase in the optical absorption from 400 to 1000 nm which renders the oxygen deficient a-IZO samples gray.
Original language | American English |
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Pages | 1141-1143 |
Number of pages | 3 |
DOIs | |
State | Published - 2009 |
Event | 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States Duration: 7 Jun 2009 → 12 Jun 2009 |
Conference
Conference | 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 |
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Country/Territory | United States |
City | Philadelphia, PA |
Period | 7/06/09 → 12/06/09 |
NREL Publication Number
- NREL/CP-520-46099
Keywords
- absorption
- amorphous materials
- argon
- conductive films
- conductivity
- electron mobility
- electron optics
- indium
- optical coupling
- optical films