Optical and Structural Properties of Microcrystalline GaN on an Amorphous Substrate Prepared by a Combination of Molecular Beam Epitaxy and Metal-Organic Chemical Vapor Deposition: Article No. 05FB03

Kwangwook Park, Jung-Wook Min, Hyeong-Yong Hwang, Eun-Kyu Kang, Ci-Hyun Kim, Dong-Seon Lee, Young-Dahl Jho, Si-Young Bae, Yong-Tak Lee

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7 Scopus Citations

Abstract

Microscale platelet-shaped GaN grains were grown on amorphous substrates by a combined epitaxial growth method of molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). First, MBE GaN was grown on an amorphous substrate as a pre-orienting layer and its structural properties were investigated. Second, MOCVD grown GaN samples using the different growth techniques of planar and selective area growth (SAG) were comparatively investigated by transmission electron microscopy (TEM), cathodoluminescence (CL), and photoluminescence (PL). In MOCVD planar GaN, strong bound exciton peaks dominated despite the high density of the threading dislocations (TDs). In MOCVD SAG GaN, on the other hand, TDs were clearly reduced with bending, but basal stacking fault (BSF) PL peaks were observed at 3.42 eV. The combined epitaxial method not only provides a deep understanding of the growth behavior but also suggests an alternative approach for the growth of GaN on amorphous substances.
Original languageAmerican English
Number of pages6
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume55
Issue number5S
DOIs
StatePublished - 2016

NREL Publication Number

  • NREL/JA-5K00-66477

Keywords

  • amorphous substrates
  • metal-organic chemical vapor deposition
  • molecular beam epitaxy

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