Optical Anisotropy of InGaAs/Ga(As,P) Quantum Dots Grown on GaAs (311)B Substrates

Y. C. Zhang, A. Pancholi, V. G. Stoleru, M. C. Hanna, A. G. Norman

Research output: Contribution to journalArticlepeer-review

3 Scopus Citations


Very high quality structures consisting of multilayer InGaAs quantum dots (QDs) were grown on (311)B GaAs by introducing strain-compensated Ga(As,P) barriers between adjacent QD layers. The dot optical anisotropy was studied by performing polarized photoluminescence (PL) measurements both on the surface and the edges of the samples. The observed in-plane optical anisotropy of the dots can be eventually related to the direction and the extent of the dot strain relaxation. The transverse electric mode of the edge-emitted PL showed about 5° deviation from the sample surface for the dots grown on (311)B GaAs. This can be attributed to the tilted vertical alignment and the shape asymmetry of dots resulted from the substrate orientation.

Original languageAmerican English
Article numberArticle No. 223109
Number of pages3
JournalApplied Physics Letters
Issue number22
StatePublished - 2007

NREL Publication Number

  • NREL/JA-520-42844


  • photoluminescence
  • quantum dots
  • solar cells


Dive into the research topics of 'Optical Anisotropy of InGaAs/Ga(As,P) Quantum Dots Grown on GaAs (311)B Substrates'. Together they form a unique fingerprint.

Cite this