Abstract
The effect of texture on enhancement and losses in photocurrent in a-Si solar cells is explored using PVOPTICS software and measurements on a-Si device structures. The texture angle has a major impact on light trapping and internal reflection. Increasing the angle causes better internal trapping in the i-layer, but also higher SnO2/a-Si reflection losses, as well as SnO2 and metal absorptionlosses. Parasitic absorption in the textured SnO2 due to back reflected light is 1-2 mA/cm2 for typical designs. N-i-p cells have a fundamental advantage over p-i-n cells since the textured TCO is at the rear of the device leading to lower losses.
Original language | American English |
---|---|
Number of pages | 7 |
State | Published - 2002 |
Event | 29th IEEE PV Specialists Conference - New Orleans, Louisiana Duration: 20 May 2002 → 24 May 2002 |
Conference
Conference | 29th IEEE PV Specialists Conference |
---|---|
City | New Orleans, Louisiana |
Period | 20/05/02 → 24/05/02 |
Bibliographical note
Prepared for the 29th IEEE PV Specialists Conference, 20-24 May; 2002, New Orleans, LouisianaNREL Publication Number
- NREL/CP-520-31477
Keywords
- a-Si solar cells
- light trapping
- optical analysis
- parasitic absorption
- photocurrent
- photocurrent
- PV
- variable angle spectroscopic ellipsometry (vase)