Optical Investigation of GaNAs

Optical Investigation of GaNAs

Research output: Contribution to conference › Paper

Abstract

A systematic study of the energy and time-resolved photolumienscence of GaInP/GaNxAs1-x double heterostructures has been performed for 0=x=1.3%. A large temperature-dependent optical-bowing coefficient (about 20-25 eV) is observed and the bandgap variation with temperature is found to depend on the nitrogen content. Finally, the minority-carrier lifetime is not simply related to the nitrogencontent. Instead, the recombination rate is proportional to the majority-carrier concentration for x=0.3% and the carbon concentration for x=0.3%.

Original language	American English
Number of pages	8
State	Published - 1998
Event	National Center for Photovoltaics Program Review Meeting - Denver, Colorado Duration: 8 Sep 1998 → 11 Sep 1998

Conference

Conference	National Center for Photovoltaics Program Review Meeting
City	Denver, Colorado
Period	8/09/98 → 11/09/98

NREL Publication Number

NREL/CP-520-25512

Access to Document

https://www.nrel.gov/docs/fy99osti/25512.pdf

Cite this

@conference{7c4df693a2e5419f83a1004a688fecfd,

title = "Optical Investigation of GaNAs",

abstract = "A systematic study of the energy and time-resolved photolumienscence of GaInP/GaNxAs1-x double heterostructures has been performed for 0=x=1.3%. A large temperature-dependent optical-bowing coefficient (about 20-25 eV) is observed and the bandgap variation with temperature is found to depend on the nitrogen content. Finally, the minority-carrier lifetime is not simply related to the nitrogencontent. Instead, the recombination rate is proportional to the majority-carrier concentration for x=0.3% and the carbon concentration for x=0.3%.",

author = "NREL",

year = "1998",

language = "American English",

note = "National Center for Photovoltaics Program Review Meeting ; Conference date: 08-09-1998 Through 11-09-1998",

}

TY - CONF

T1 - Optical Investigation of GaNAs

AU - NREL, null

PY - 1998

Y1 - 1998

N2 - A systematic study of the energy and time-resolved photolumienscence of GaInP/GaNxAs1-x double heterostructures has been performed for 0=x=1.3%. A large temperature-dependent optical-bowing coefficient (about 20-25 eV) is observed and the bandgap variation with temperature is found to depend on the nitrogen content. Finally, the minority-carrier lifetime is not simply related to the nitrogencontent. Instead, the recombination rate is proportional to the majority-carrier concentration for x=0.3% and the carbon concentration for x=0.3%.

AB - A systematic study of the energy and time-resolved photolumienscence of GaInP/GaNxAs1-x double heterostructures has been performed for 0=x=1.3%. A large temperature-dependent optical-bowing coefficient (about 20-25 eV) is observed and the bandgap variation with temperature is found to depend on the nitrogen content. Finally, the minority-carrier lifetime is not simply related to the nitrogencontent. Instead, the recombination rate is proportional to the majority-carrier concentration for x=0.3% and the carbon concentration for x=0.3%.

M3 - Paper

T2 - National Center for Photovoltaics Program Review Meeting

Y2 - 8 September 1998 through 11 September 1998

ER -

Optical Investigation of GaNAs

Abstract

Conference

NREL Publication Number

Access to Document

Fingerprint

Cite this