Optical Investigation of GaNAs

    Research output: Contribution to conferencePaper


    A systematic study of the energy and time-resolved photolumienscence of GaInP/GaNxAs1-x double heterostructures has been performed for 0=x=1.3%. A large temperature-dependent optical-bowing coefficient (about 20-25 eV) is observed and the bandgap variation with temperature is found to depend on the nitrogen content. Finally, the minority-carrier lifetime is not simply related to the nitrogencontent. Instead, the recombination rate is proportional to the majority-carrier concentration for x=0.3% and the carbon concentration for x=0.3%.
    Original languageAmerican English
    Number of pages8
    StatePublished - 1998
    EventNational Center for Photovoltaics Program Review Meeting - Denver, Colorado
    Duration: 8 Sep 199811 Sep 1998


    ConferenceNational Center for Photovoltaics Program Review Meeting
    CityDenver, Colorado

    NREL Publication Number

    • NREL/CP-520-25512


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