Optical Method for Determining the Doping Depth Profile in Silicon

Dean Levi (Inventor)

Research output: Patent

Abstract

A method of processing a sample, comprising the steps of: introducing dopant into a sample thereby producing a doped sample; producing a healed sampled including a doping density profile in response to introducing the dopant into the sample; and measuring the doping density profile of the healed sample by performing reflectometry using light generated within the visible wavelength spectrum.
Original languageAmerican English
Patent number7,179,665 B1
StatePublished - 2007

NREL Publication Number

  • NREL/PT-520-41407

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