Optical Metrology for Real Time Control of Elemental Composition, Distribution, and Thickness of Cu(In1-xGax)Se2 Thin Films

Jian Li; Miguel Contreras; John Scharf; Matthew Young; Thomas E. Furtak; Rommel Noufi; Dean Levi

doi:10.1109/PVSC.2013.6745008

Optical Metrology for Real Time Control of Elemental Composition, Distribution, and Thickness of Cu(In1-xGax)Se2 Thin Films

Jian Li, Miguel Contreras, John Scharf, Matthew Young, Thomas E. Furtak, Rommel Noufi, Dean Levi

Center for Energy Conversion and Storage Systems

Research output: Contribution to conference › Paper › peer-review

2 Scopus Citations

Abstract

An in situ optical metrology has been developed to provide real time control of three crucial film properties during the 3-stage deposition of Cu(In_1-xGa_x)Se₂ thin films. These properties include: (1) the overall Cu/(In+Ga) ratio; (2) the distribution of indium and gallium between the 1^st and 3^rd stages; and (3) the film thickness. The accuracy and reliability of this metrology were experimentally verified. It has been established as a routine process control tool for CIGS depositions at NREL. This metrology greatly expands the parameter space that can be systematically explored. It also holds the promise for applications in PV module manufacturing.

Original language	American English
Pages	2609-2611
Number of pages	3
DOIs	https://doi.org/10.1109/PVSC.2013.6745008 https://doi.org/10.1109/PVSC.2013.6745008
State	Published - 2013
Event	39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States Duration: 16 Jun 2013 → 21 Jun 2013

Conference

Conference	39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Country/Territory	United States
City	Tampa, FL
Period	16/06/13 → 21/06/13

NREL Publication Number

NREL/CP-5200-57843

Keywords

3-stage deposition
Optical metrology
Process control
Thin film

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Li, J., Contreras, M., Scharf, J., Young, M., Furtak, T. E., Noufi, R., & Levi, D. (2013). Optical Metrology for Real Time Control of Elemental Composition, Distribution, and Thickness of Cu(In1-xGax)Se2 Thin Films. 2609-2611. Paper presented at 39th IEEE Photovoltaic Specialists Conference, PVSC 2013, Tampa, FL, United States. https://doi.org/10.1109/PVSC.2013.6745008, https://doi.org/10.1109/PVSC.2013.6745008

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title = "Optical Metrology for Real Time Control of Elemental Composition, Distribution, and Thickness of Cu(In1-xGax)Se2 Thin Films",

abstract = "An in situ optical metrology has been developed to provide real time control of three crucial film properties during the 3-stage deposition of Cu(In1-xGax)Se2 thin films. These properties include: (1) the overall Cu/(In+Ga) ratio; (2) the distribution of indium and gallium between the 1st and 3rd stages; and (3) the film thickness. The accuracy and reliability of this metrology were experimentally verified. It has been established as a routine process control tool for CIGS depositions at NREL. This metrology greatly expands the parameter space that can be systematically explored. It also holds the promise for applications in PV module manufacturing.",

keywords = "3-stage deposition, Optical metrology, Process control, Thin film",

author = "Jian Li and Miguel Contreras and John Scharf and Matthew Young and Furtak, {Thomas E.} and Rommel Noufi and Dean Levi",

year = "2013",

doi = "10.1109/PVSC.2013.6745008",

language = "American English",

pages = "2609--2611",

note = "39th IEEE Photovoltaic Specialists Conference, PVSC 2013 ; Conference date: 16-06-2013 Through 21-06-2013",

}

Li, J, Contreras, M, Scharf, J, Young, M, Furtak, TE, Noufi, R & Levi, D 2013, 'Optical Metrology for Real Time Control of Elemental Composition, Distribution, and Thickness of Cu(In1-xGax)Se2 Thin Films', Paper presented at 39th IEEE Photovoltaic Specialists Conference, PVSC 2013, Tampa, FL, United States, 16/06/13 - 21/06/13 pp. 2609-2611. https://doi.org/10.1109/PVSC.2013.6745008, https://doi.org/10.1109/PVSC.2013.6745008

TY - CONF

T1 - Optical Metrology for Real Time Control of Elemental Composition, Distribution, and Thickness of Cu(In1-xGax)Se2 Thin Films

AU - Li, Jian

AU - Contreras, Miguel

AU - Scharf, John

AU - Young, Matthew

AU - Furtak, Thomas E.

AU - Noufi, Rommel

AU - Levi, Dean

PY - 2013

Y1 - 2013

N2 - An in situ optical metrology has been developed to provide real time control of three crucial film properties during the 3-stage deposition of Cu(In1-xGax)Se2 thin films. These properties include: (1) the overall Cu/(In+Ga) ratio; (2) the distribution of indium and gallium between the 1st and 3rd stages; and (3) the film thickness. The accuracy and reliability of this metrology were experimentally verified. It has been established as a routine process control tool for CIGS depositions at NREL. This metrology greatly expands the parameter space that can be systematically explored. It also holds the promise for applications in PV module manufacturing.

AB - An in situ optical metrology has been developed to provide real time control of three crucial film properties during the 3-stage deposition of Cu(In1-xGax)Se2 thin films. These properties include: (1) the overall Cu/(In+Ga) ratio; (2) the distribution of indium and gallium between the 1st and 3rd stages; and (3) the film thickness. The accuracy and reliability of this metrology were experimentally verified. It has been established as a routine process control tool for CIGS depositions at NREL. This metrology greatly expands the parameter space that can be systematically explored. It also holds the promise for applications in PV module manufacturing.

KW - 3-stage deposition

KW - Optical metrology

KW - Process control

KW - Thin film

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DO - 10.1109/PVSC.2013.6745008

M3 - Paper

AN - SCOPUS:84896453459

SP - 2609

EP - 2611

T2 - 39th IEEE Photovoltaic Specialists Conference, PVSC 2013

Y2 - 16 June 2013 through 21 June 2013

ER -

Optical Metrology for Real Time Control of Elemental Composition, Distribution, and Thickness of Cu(In1-xGax)Se2 Thin Films

Abstract

Conference

NREL Publication Number

Keywords

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