Optical Properties and Carrier Dynamics of GaAs/GaInAs Multiple-Quantum-Well Shell Grown on GaAs Nanowire by Molecular Beam Epitaxy

Kwangwook Park; Sooraj Ravindran; Gun Ju; Jung-Wook Min; Seokjin Kang; NoSoung Myoung; Sang-Youp Yim; Yong-Ryun Jo; Bong-Joong Kim; Yong Lee

doi:10.1016/j.cap.2016.08.025

Optical Properties and Carrier Dynamics of GaAs/GaInAs Multiple-Quantum-Well Shell Grown on GaAs Nanowire by Molecular Beam Epitaxy

Kwangwook Park
, Sooraj Ravindran
, Gun Ju
, Jung-Wook Min
, Seokjin Kang
, NoSoung Myoung
, Sang-Youp Yim
, Yong-Ryun Jo
, Bong-Joong Kim
, Yong Lee

Materials Science

Research output: Contribution to journal › Article › peer-review

2 Scopus Citations

Abstract

GaAs/GaInAs multiple-quantum-well (MQW) shells having different GaInAs shell width formed on the surface of self-catalyzed GaAs core nanowires (NWs) are grown on (100) Si substrate using molecular beam epitaxy. The photoluminescence emission from GaAs/GaInAs MQW shells and the carrier lifetime could be varied by changing the width of GaInAs shell. Time-resolved photoluminescence measurements showed that the carrier lifetime had a fast and slow decay owing to the mixing of wurtzite and zinc-blende structures of the NWs. Furthermore, strain relaxation caused the carrier lifetime to decrease beyond a certain thickness of GaInAs quantum well shells.

Original language	American English
Pages (from-to)	1622-1626
Number of pages	5
Journal	Current Applied Physics
Volume	16
Issue number	12
DOIs	https://doi.org/10.1016/j.cap.2016.08.025
State	Published - 2016

NLR Publication Number

NREL/JA-5K00-67298

Keywords

epitaxy growth
III-V semiconductors
molecular beam epitaxy
nanowire
optical characterization

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10.1016/j.cap.2016.08.025

Cite this

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title = "Optical Properties and Carrier Dynamics of GaAs/GaInAs Multiple-Quantum-Well Shell Grown on GaAs Nanowire by Molecular Beam Epitaxy",

abstract = "GaAs/GaInAs multiple-quantum-well (MQW) shells having different GaInAs shell width formed on the surface of self-catalyzed GaAs core nanowires (NWs) are grown on (100) Si substrate using molecular beam epitaxy. The photoluminescence emission from GaAs/GaInAs MQW shells and the carrier lifetime could be varied by changing the width of GaInAs shell. Time-resolved photoluminescence measurements showed that the carrier lifetime had a fast and slow decay owing to the mixing of wurtzite and zinc-blende structures of the NWs. Furthermore, strain relaxation caused the carrier lifetime to decrease beyond a certain thickness of GaInAs quantum well shells.",

keywords = "epitaxy growth, III-V semiconductors, molecular beam epitaxy, nanowire, optical characterization",

author = "Kwangwook Park and Sooraj Ravindran and Gun Ju and Jung-Wook Min and Seokjin Kang and NoSoung Myoung and Sang-Youp Yim and Yong-Ryun Jo and Bong-Joong Kim and Yong Lee",

year = "2016",

doi = "10.1016/j.cap.2016.08.025",

language = "American English",

volume = "16",

pages = "1622--1626",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier B.V.",

number = "12",

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TY - JOUR

T1 - Optical Properties and Carrier Dynamics of GaAs/GaInAs Multiple-Quantum-Well Shell Grown on GaAs Nanowire by Molecular Beam Epitaxy

AU - Park, Kwangwook

AU - Ravindran, Sooraj

AU - Ju, Gun

AU - Min, Jung-Wook

AU - Kang, Seokjin

AU - Myoung, NoSoung

AU - Yim, Sang-Youp

AU - Jo, Yong-Ryun

AU - Kim, Bong-Joong

AU - Lee, Yong

PY - 2016

Y1 - 2016

N2 - GaAs/GaInAs multiple-quantum-well (MQW) shells having different GaInAs shell width formed on the surface of self-catalyzed GaAs core nanowires (NWs) are grown on (100) Si substrate using molecular beam epitaxy. The photoluminescence emission from GaAs/GaInAs MQW shells and the carrier lifetime could be varied by changing the width of GaInAs shell. Time-resolved photoluminescence measurements showed that the carrier lifetime had a fast and slow decay owing to the mixing of wurtzite and zinc-blende structures of the NWs. Furthermore, strain relaxation caused the carrier lifetime to decrease beyond a certain thickness of GaInAs quantum well shells.

AB - GaAs/GaInAs multiple-quantum-well (MQW) shells having different GaInAs shell width formed on the surface of self-catalyzed GaAs core nanowires (NWs) are grown on (100) Si substrate using molecular beam epitaxy. The photoluminescence emission from GaAs/GaInAs MQW shells and the carrier lifetime could be varied by changing the width of GaInAs shell. Time-resolved photoluminescence measurements showed that the carrier lifetime had a fast and slow decay owing to the mixing of wurtzite and zinc-blende structures of the NWs. Furthermore, strain relaxation caused the carrier lifetime to decrease beyond a certain thickness of GaInAs quantum well shells.

KW - epitaxy growth

KW - III-V semiconductors

KW - molecular beam epitaxy

KW - nanowire

KW - optical characterization

U2 - 10.1016/j.cap.2016.08.025

DO - 10.1016/j.cap.2016.08.025

M3 - Article

SN - 1567-1739

VL - 16

SP - 1622

EP - 1626

JO - Current Applied Physics

JF - Current Applied Physics

IS - 12

ER -

Optical Properties and Carrier Dynamics of GaAs/GaInAs Multiple-Quantum-Well Shell Grown on GaAs Nanowire by Molecular Beam Epitaxy

Abstract

NLR Publication Number

Keywords

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