Optical Properties and Electroluminescence of Ordered and Disordered AlAs/GaAs Superlattices

D. J. Arent; R. G. Alonso; G. S. Horner; A. E. Kibbler; J. M. Olson; X. Yin; M. C. Delong; A. J. Springthorpe; A. Majeed; D. J. Mowbray; M. S. Skolnick

Optical Properties and Electroluminescence of Ordered and Disordered AlAs/GaAs Superlattices

D. J. Arent, R. G. Alonso, G. S. Horner, A. E. Kibbler, J. M. Olson, X. Yin, M. C. Delong, A. J. Springthorpe, A. Majeed, D. J. Mowbray, M. S. Skolnick

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National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

Abstract

In this study, we report the optical properties of a variety of compositionally equivalent disordered superlattices in the AlAs/GaAs system. Markedly different signatures are seen in the steady-state optical signatures of a random pseudobinary Al_0.5Ga_0.5As alloy and (AlAs)_n(GaAs)_4-n superlattices (SLs) where n = 2 (ordered) or n is randomly chosen (disordered). Relative to the properties of the pseudobinary alloy or ordered SL, intense, red-shifted, photoluminescence (PL) peaks and broad non-excitonic absorption are observed from disordered (AlAs)_n(GaAs)_4-n SLs where n is randomly chosen from the sets [0, 1, 2, 3, 4] or [1, 2, 3]. Our observations suggest that a large density of states at energies lower than the compositionally equivalent pseudobinary band gap exist, and including wider wells and barriers may lead strongly localized regions and the onset of quantum effects. Room temperature electroluminescence is also observed from disordered SL pn samples, and the energy, intensity, and efficiency are shown to vary with deposition sequence.

Original language	American English
Pages	499-505
Number of pages	7
State	Published - 1994
Event	Proceedings of the Symposium on Defects in Advanced Semiconductors: Physics and Applications - Boston, MA, USA Duration: 29 Nov 1993 → 1 Dec 1993

Conference

Conference	Proceedings of the Symposium on Defects in Advanced Semiconductors: Physics and Applications
City	Boston, MA, USA
Period	29/11/93 → 1/12/93

NREL Publication Number

ACNR/CP-451-14012

Cite this

Arent, D. J., Alonso, R. G., Horner, G. S., Kibbler, A. E., Olson, J. M., Yin, X., Delong, M. C., Springthorpe, A. J., Majeed, A., Mowbray, D. J., & Skolnick, M. S. (1994). Optical Properties and Electroluminescence of Ordered and Disordered AlAs/GaAs Superlattices. 499-505. Paper presented at Proceedings of the Symposium on Defects in Advanced Semiconductors: Physics and Applications, Boston, MA, USA.

@conference{6dce212f6b864a9489aafabd4d50147b,

title = "Optical Properties and Electroluminescence of Ordered and Disordered AlAs/GaAs Superlattices",

abstract = "In this study, we report the optical properties of a variety of compositionally equivalent disordered superlattices in the AlAs/GaAs system. Markedly different signatures are seen in the steady-state optical signatures of a random pseudobinary Al0.5Ga0.5As alloy and (AlAs)n(GaAs)4-n superlattices (SLs) where n = 2 (ordered) or n is randomly chosen (disordered). Relative to the properties of the pseudobinary alloy or ordered SL, intense, red-shifted, photoluminescence (PL) peaks and broad non-excitonic absorption are observed from disordered (AlAs)n(GaAs)4-n SLs where n is randomly chosen from the sets [0, 1, 2, 3, 4] or [1, 2, 3]. Our observations suggest that a large density of states at energies lower than the compositionally equivalent pseudobinary band gap exist, and including wider wells and barriers may lead strongly localized regions and the onset of quantum effects. Room temperature electroluminescence is also observed from disordered SL pn samples, and the energy, intensity, and efficiency are shown to vary with deposition sequence.",

author = "Arent, {D. J.} and Alonso, {R. G.} and Horner, {G. S.} and Kibbler, {A. E.} and Olson, {J. M.} and X. Yin and Delong, {M. C.} and Springthorpe, {A. J.} and A. Majeed and Mowbray, {D. J.} and Skolnick, {M. S.}",

year = "1994",

language = "American English",

pages = "499--505",

note = "Proceedings of the Symposium on Defects in Advanced Semiconductors: Physics and Applications ; Conference date: 29-11-1993 Through 01-12-1993",

}

Arent, DJ, Alonso, RG, Horner, GS, Kibbler, AE, Olson, JM, Yin, X, Delong, MC, Springthorpe, AJ, Majeed, A, Mowbray, DJ & Skolnick, MS 1994, 'Optical Properties and Electroluminescence of Ordered and Disordered AlAs/GaAs Superlattices', Paper presented at Proceedings of the Symposium on Defects in Advanced Semiconductors: Physics and Applications, Boston, MA, USA, 29/11/93 - 1/12/93 pp. 499-505.

TY - CONF

T1 - Optical Properties and Electroluminescence of Ordered and Disordered AlAs/GaAs Superlattices

AU - Arent, D. J.

AU - Alonso, R. G.

AU - Horner, G. S.

AU - Kibbler, A. E.

AU - Olson, J. M.

AU - Yin, X.

AU - Delong, M. C.

AU - Springthorpe, A. J.

AU - Majeed, A.

AU - Mowbray, D. J.

AU - Skolnick, M. S.

PY - 1994

Y1 - 1994

N2 - In this study, we report the optical properties of a variety of compositionally equivalent disordered superlattices in the AlAs/GaAs system. Markedly different signatures are seen in the steady-state optical signatures of a random pseudobinary Al0.5Ga0.5As alloy and (AlAs)n(GaAs)4-n superlattices (SLs) where n = 2 (ordered) or n is randomly chosen (disordered). Relative to the properties of the pseudobinary alloy or ordered SL, intense, red-shifted, photoluminescence (PL) peaks and broad non-excitonic absorption are observed from disordered (AlAs)n(GaAs)4-n SLs where n is randomly chosen from the sets [0, 1, 2, 3, 4] or [1, 2, 3]. Our observations suggest that a large density of states at energies lower than the compositionally equivalent pseudobinary band gap exist, and including wider wells and barriers may lead strongly localized regions and the onset of quantum effects. Room temperature electroluminescence is also observed from disordered SL pn samples, and the energy, intensity, and efficiency are shown to vary with deposition sequence.

AB - In this study, we report the optical properties of a variety of compositionally equivalent disordered superlattices in the AlAs/GaAs system. Markedly different signatures are seen in the steady-state optical signatures of a random pseudobinary Al0.5Ga0.5As alloy and (AlAs)n(GaAs)4-n superlattices (SLs) where n = 2 (ordered) or n is randomly chosen (disordered). Relative to the properties of the pseudobinary alloy or ordered SL, intense, red-shifted, photoluminescence (PL) peaks and broad non-excitonic absorption are observed from disordered (AlAs)n(GaAs)4-n SLs where n is randomly chosen from the sets [0, 1, 2, 3, 4] or [1, 2, 3]. Our observations suggest that a large density of states at energies lower than the compositionally equivalent pseudobinary band gap exist, and including wider wells and barriers may lead strongly localized regions and the onset of quantum effects. Room temperature electroluminescence is also observed from disordered SL pn samples, and the energy, intensity, and efficiency are shown to vary with deposition sequence.

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M3 - Paper

AN - SCOPUS:0028203217

SP - 499

EP - 505

T2 - Proceedings of the Symposium on Defects in Advanced Semiconductors: Physics and Applications

Y2 - 29 November 1993 through 1 December 1993

ER -

Optical Properties and Electroluminescence of Ordered and Disordered AlAs/GaAs Superlattices

Abstract

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