Optical Properties and Grain Boundary Effects in CuInSe2

L. L. Kazmerski; M. Hallerdt; P. J. Ireland; R. A. Mickelsen; W. S. Chen

doi:10.1116/1.571928

Optical Properties and Grain Boundary Effects in CuInSe2

L. L. Kazmerski, M. Hallerdt, P. J. Ireland, R. A. Mickelsen, W. S. Chen

Materials Science

Research output: Contribution to journal › Article › peer-review

126 Scopus Citations

Abstract

The optical properties of CuInSe, thin films and single crystals are reported. The wavelength dependence of the refractive index and extinction coefficient is measured using multiple angle-of-incidence ellipsometry. Absorption coefficients as high as 6 × 10⁵/cm are reported—the highest for any semiconductor. CuInSe₂ is confirmed to have a room temperature, direct-bandgap transition near 0.96 eV for the single crystals, and 1.02 for the thin films. The difference is proposed to be due to nonuniformity in composition of the polycrystalline material. Additional absorption in the low absorption-coefficient regime is likely due to transitions associated with phonon absorptions for the single crystals. The effects of heat treatments in Ar, N, and O are shown to improve the optical properties of the thin films due to improvement in film compositional uniformity. Heating in high vacuum causes Se desorption near the film surface, causing a related degradation in the absorption characteristics.

Original language	American English
Pages (from-to)	395-398
Number of pages	4
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	1
Issue number	2
DOIs	https://doi.org/10.1116/1.571928 https://doi.org/10.1116/1.571928
State	Published - Apr 1983

Bibliographical note

Work performed by Boeing Aerospace Corporation, Seattle, Washington, and Solar Energy Research Institute, Golden, Colorado

NREL Publication Number

ACNR/JA-213-3935

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title = "Optical Properties and Grain Boundary Effects in CuInSe2",

abstract = "The optical properties of CuInSe, thin films and single crystals are reported. The wavelength dependence of the refractive index and extinction coefficient is measured using multiple angle-of-incidence ellipsometry. Absorption coefficients as high as 6 × 105/cm are reported—the highest for any semiconductor. CuInSe2 is confirmed to have a room temperature, direct-bandgap transition near 0.96 eV for the single crystals, and 1.02 for the thin films. The difference is proposed to be due to nonuniformity in composition of the polycrystalline material. Additional absorption in the low absorption-coefficient regime is likely due to transitions associated with phonon absorptions for the single crystals. The effects of heat treatments in Ar, N, and O are shown to improve the optical properties of the thin films due to improvement in film compositional uniformity. Heating in high vacuum causes Se desorption near the film surface, causing a related degradation in the absorption characteristics.",

author = "Kazmerski, {L. L.} and M. Hallerdt and Ireland, {P. J.} and Mickelsen, {R. A.} and Chen, {W. S.}",

note = "Work performed by Boeing Aerospace Corporation, Seattle, Washington, and Solar Energy Research Institute, Golden, Colorado",

year = "1983",

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language = "American English",

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pages = "395--398",

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T1 - Optical Properties and Grain Boundary Effects in CuInSe2

AU - Kazmerski, L. L.

AU - Hallerdt, M.

AU - Ireland, P. J.

AU - Mickelsen, R. A.

AU - Chen, W. S.

N1 - Work performed by Boeing Aerospace Corporation, Seattle, Washington, and Solar Energy Research Institute, Golden, Colorado

PY - 1983/4

Y1 - 1983/4

N2 - The optical properties of CuInSe, thin films and single crystals are reported. The wavelength dependence of the refractive index and extinction coefficient is measured using multiple angle-of-incidence ellipsometry. Absorption coefficients as high as 6 × 105/cm are reported—the highest for any semiconductor. CuInSe2 is confirmed to have a room temperature, direct-bandgap transition near 0.96 eV for the single crystals, and 1.02 for the thin films. The difference is proposed to be due to nonuniformity in composition of the polycrystalline material. Additional absorption in the low absorption-coefficient regime is likely due to transitions associated with phonon absorptions for the single crystals. The effects of heat treatments in Ar, N, and O are shown to improve the optical properties of the thin films due to improvement in film compositional uniformity. Heating in high vacuum causes Se desorption near the film surface, causing a related degradation in the absorption characteristics.

AB - The optical properties of CuInSe, thin films and single crystals are reported. The wavelength dependence of the refractive index and extinction coefficient is measured using multiple angle-of-incidence ellipsometry. Absorption coefficients as high as 6 × 105/cm are reported—the highest for any semiconductor. CuInSe2 is confirmed to have a room temperature, direct-bandgap transition near 0.96 eV for the single crystals, and 1.02 for the thin films. The difference is proposed to be due to nonuniformity in composition of the polycrystalline material. Additional absorption in the low absorption-coefficient regime is likely due to transitions associated with phonon absorptions for the single crystals. The effects of heat treatments in Ar, N, and O are shown to improve the optical properties of the thin films due to improvement in film compositional uniformity. Heating in high vacuum causes Se desorption near the film surface, causing a related degradation in the absorption characteristics.

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JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 2

ER -

Optical Properties and Grain Boundary Effects in CuInSe2

Abstract

Bibliographical note

NREL Publication Number

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