Optical Properties of Ordered and Randomly Disordered AlAs/GaAs Short-Period Superlattices

D. J. Arent, R. G. Alonso, G. S. Horner, D. Levi, M. Bode, A. Mascarenhas, J. M. Olson, X. Yin, M. C. Delong, A. J. Springthorpe, A. Majeed, D. J. Mowbray, M. S. Skolnick

Research output: Contribution to journalArticlepeer-review

21 Scopus Citations


The optical properties of different atomic arrangements of Al0.5Ga0.5As, deposited by molecular-beam epitaxy and having nominally identical average composition, have been compared. Markedly different signatures are seen in steady-state, time-resolved, and microwave-modulated photoluminescence, photoreflectance, and photoluminescence-excitation spectroscopies for a random pseudobinary alloy and (AlAs)n(GaAs)4-n superlattices where n=2 (ordered) or n is randomly chosen (disordered) from the sets [1,2,3] or [0,1,2,3,4]. When n=[0, 1, 2, 3, or 4] the optical properties are dominated by quantum confinement effects due to the presence of layers with thicknesses up to 14 monolayers. When n=[1, 2, or 3] the optical properties are consistently described by the presence of disorder-induced localized states and a hopping-assisted recombination mechanism.

Original languageAmerican English
Pages (from-to)11173-11184
Number of pages12
JournalPhysical Review B
Issue number16
StatePublished - 1994

NREL Publication Number

  • NREL/JA-451-5728


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