Optical Properties of Ordered and Randomly Disordered AlAs/GaAs Short-Period Superlattices

D. J. Arent, R. G. Alonso, G. S. Horner, D. Levi, M. Bode, A. Mascarenhas, J. M. Olson, X. Yin, M. C. Delong, A. J. Springthorpe, A. Majeed, D. J. Mowbray, M. S. Skolnick

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    21 Scopus Citations

    Abstract

    The optical properties of different atomic arrangements of Al0.5Ga0.5As, deposited by molecular-beam epitaxy and having nominally identical average composition, have been compared. Markedly different signatures are seen in steady-state, time-resolved, and microwave-modulated photoluminescence, photoreflectance, and photoluminescence-excitation spectroscopies for a random pseudobinary alloy and (AlAs)n(GaAs)4-n superlattices where n=2 (ordered) or n is randomly chosen (disordered) from the sets [1,2,3] or [0,1,2,3,4]. When n=[0, 1, 2, 3, or 4] the optical properties are dominated by quantum confinement effects due to the presence of layers with thicknesses up to 14 monolayers. When n=[1, 2, or 3] the optical properties are consistently described by the presence of disorder-induced localized states and a hopping-assisted recombination mechanism.

    Original languageAmerican English
    Pages (from-to)11173-11184
    Number of pages12
    JournalPhysical Review B
    Volume49
    Issue number16
    DOIs
    StatePublished - 1994

    NREL Publication Number

    • NREL/JA-451-5728

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