Optical Properties of Spontaneous Lateral Composition Modulation in AlAs/InAs Short-Period Superlattices

S. Francoeur; Yong Zhang; A. G. Norman; F. Alsina; A. Mascarenhas; J. L. Reno; E. D. Jones; S. R. Lee; D. M. Follstaedt

doi:10.1063/1.1311598

Optical Properties of Spontaneous Lateral Composition Modulation in AlAs/InAs Short-Period Superlattices

S. Francoeur, Yong Zhang, A. G. Norman, F. Alsina, A. Mascarenhas, J. L. Reno, E. D. Jones, S. R. Lee, D. M. Follstaedt

Materials Science

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Abstract

The effect of lateral composition modulation, spontaneously generated during the epitaxial growth of an AlAs/InAs short-period superlattice, on the electronic band structure is investigated using phototransmission and photoluminescence spectroscopy. Compared with uniform layers of identical average composition, the presence of the composition modulation considerably reduces the band-gap energy and produces strongly polarized emission and absorption spectra. We demonstrate that the dominant polarization direction can selectively be aligned along the [1̄10] or [010] crystallographic directions. In compressively strained samples, the use of (001) InP substrates slightly miscut toward (111)A or (101) resulted in modulation directions along [110] or [100], respectively, and dominant polarization directions along a direction orthogonal to the respective composition modulation. Band-gap reductions as high as 350 and 310 meV are obtained for samples with composition modulation along [110] and [100], respectively. Ratios of polarized intensities up to 26 are observed in transmission spectra.

Original language	American English
Pages (from-to)	1765-1767
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	12
DOIs	https://doi.org/10.1063/1.1311598 https://doi.org/10.1063/1.1311598
State	Published - 2000

NREL Publication Number

NREL/JA-590-29553

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@article{b162fcc368d34ebda99e487f11943ff6,

title = "Optical Properties of Spontaneous Lateral Composition Modulation in AlAs/InAs Short-Period Superlattices",

abstract = "The effect of lateral composition modulation, spontaneously generated during the epitaxial growth of an AlAs/InAs short-period superlattice, on the electronic band structure is investigated using phototransmission and photoluminescence spectroscopy. Compared with uniform layers of identical average composition, the presence of the composition modulation considerably reduces the band-gap energy and produces strongly polarized emission and absorption spectra. We demonstrate that the dominant polarization direction can selectively be aligned along the [{\=1}10] or [010] crystallographic directions. In compressively strained samples, the use of (001) InP substrates slightly miscut toward (111)A or (101) resulted in modulation directions along [110] or [100], respectively, and dominant polarization directions along a direction orthogonal to the respective composition modulation. Band-gap reductions as high as 350 and 310 meV are obtained for samples with composition modulation along [110] and [100], respectively. Ratios of polarized intensities up to 26 are observed in transmission spectra.",

author = "S. Francoeur and Yong Zhang and Norman, {A. G.} and F. Alsina and A. Mascarenhas and Reno, {J. L.} and Jones, {E. D.} and Lee, {S. R.} and Follstaedt, {D. M.}",

year = "2000",

doi = "10.1063/1.1311598",

language = "American English",

volume = "77",

pages = "1765--1767",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Optical Properties of Spontaneous Lateral Composition Modulation in AlAs/InAs Short-Period Superlattices

AU - Francoeur, S.

AU - Zhang, Yong

AU - Norman, A. G.

AU - Alsina, F.

AU - Mascarenhas, A.

AU - Reno, J. L.

AU - Jones, E. D.

AU - Lee, S. R.

AU - Follstaedt, D. M.

PY - 2000

Y1 - 2000

N2 - The effect of lateral composition modulation, spontaneously generated during the epitaxial growth of an AlAs/InAs short-period superlattice, on the electronic band structure is investigated using phototransmission and photoluminescence spectroscopy. Compared with uniform layers of identical average composition, the presence of the composition modulation considerably reduces the band-gap energy and produces strongly polarized emission and absorption spectra. We demonstrate that the dominant polarization direction can selectively be aligned along the [1̄10] or [010] crystallographic directions. In compressively strained samples, the use of (001) InP substrates slightly miscut toward (111)A or (101) resulted in modulation directions along [110] or [100], respectively, and dominant polarization directions along a direction orthogonal to the respective composition modulation. Band-gap reductions as high as 350 and 310 meV are obtained for samples with composition modulation along [110] and [100], respectively. Ratios of polarized intensities up to 26 are observed in transmission spectra.

AB - The effect of lateral composition modulation, spontaneously generated during the epitaxial growth of an AlAs/InAs short-period superlattice, on the electronic band structure is investigated using phototransmission and photoluminescence spectroscopy. Compared with uniform layers of identical average composition, the presence of the composition modulation considerably reduces the band-gap energy and produces strongly polarized emission and absorption spectra. We demonstrate that the dominant polarization direction can selectively be aligned along the [1̄10] or [010] crystallographic directions. In compressively strained samples, the use of (001) InP substrates slightly miscut toward (111)A or (101) resulted in modulation directions along [110] or [100], respectively, and dominant polarization directions along a direction orthogonal to the respective composition modulation. Band-gap reductions as high as 350 and 310 meV are obtained for samples with composition modulation along [110] and [100], respectively. Ratios of polarized intensities up to 26 are observed in transmission spectra.

UR - http://www.scopus.com/inward/record.url?scp=0000736276&partnerID=8YFLogxK

U2 - 10.1063/1.1311598

DO - 10.1063/1.1311598

M3 - Article

AN - SCOPUS:0000736276

SN - 0003-6951

VL - 77

SP - 1765

EP - 1767

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Optical Properties of Spontaneous Lateral Composition Modulation in AlAs/InAs Short-Period Superlattices

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