Optical Properties of Zn(O,S) Thin Films Deposited by RF Sputtering, Atomic Layer Deposition, and Chemical Bath Deposition

Jian Li; Stephen Glynn; Steven Christensen; Jonathan Mann; Bobby To; Kannan Ramanathan; Rommel Noufi; Thomas E. Furtak; Dean Levi

doi:10.1109/PVSC.2012.6317896

Optical Properties of Zn(O,S) Thin Films Deposited by RF Sputtering, Atomic Layer Deposition, and Chemical Bath Deposition

Jian Li, Stephen Glynn, Steven Christensen, Jonathan Mann, Bobby To, Kannan Ramanathan, Rommel Noufi, Thomas E. Furtak, Dean Levi

Materials Science

Research output: Contribution to conference › Paper › peer-review

1 Scopus Citations

Abstract

Zn(O,S) thin films 27 - 100 nm thick were deposited on glass or Cu(In _xGa_1-x)Se₂/Molybdenum/glass with RF sputtering, atomic layer deposition, and chemical bath deposition. The complex dielectric functions ε of these films were extracted by spectroscopic ellipsometry and transmission analyses. It is found that varies on a large scale, indicative of significant variations in the films' chemical and physical properties, with the growth methods and deposition parameters. By fitting the spectra based on the parabolic band approximation, the E₀ critical point energies and broadening parameters were quantified to provide insights on the band gap, defect density, and phase segregation.

Original language	American English
Pages	1580-1583
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2012.6317896 https://doi.org/10.1109/PVSC.2012.6317896
State	Published - 2012
Event	38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States Duration: 3 Jun 2012 → 8 Jun 2012

Conference

Conference	38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Country/Territory	United States
City	Austin, TX
Period	3/06/12 → 8/06/12

Bibliographical note

See CP-5200-54128 for preprint

NREL Publication Number

NREL/CP-5200-56912

Keywords

dielectric constant
ellipsometry
nanocrystals
photovoltaic cells
thin films
wide band gap semiconductors
Zinc compounds

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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Li, J., Glynn, S., Christensen, S., Mann, J., To, B., Ramanathan, K., Noufi, R., Furtak, T. E., & Levi, D. (2012). Optical Properties of Zn(O,S) Thin Films Deposited by RF Sputtering, Atomic Layer Deposition, and Chemical Bath Deposition. 1580-1583. Paper presented at 38th IEEE Photovoltaic Specialists Conference, PVSC 2012, Austin, TX, United States. https://doi.org/10.1109/PVSC.2012.6317896, https://doi.org/10.1109/PVSC.2012.6317896

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title = "Optical Properties of Zn(O,S) Thin Films Deposited by RF Sputtering, Atomic Layer Deposition, and Chemical Bath Deposition",

abstract = "Zn(O,S) thin films 27 - 100 nm thick were deposited on glass or Cu(In xGa1-x)Se2/Molybdenum/glass with RF sputtering, atomic layer deposition, and chemical bath deposition. The complex dielectric functions ε of these films were extracted by spectroscopic ellipsometry and transmission analyses. It is found that varies on a large scale, indicative of significant variations in the films' chemical and physical properties, with the growth methods and deposition parameters. By fitting the spectra based on the parabolic band approximation, the E0 critical point energies and broadening parameters were quantified to provide insights on the band gap, defect density, and phase segregation.",

keywords = "dielectric constant, ellipsometry, nanocrystals, photovoltaic cells, thin films, wide band gap semiconductors, Zinc compounds",

author = "Jian Li and Stephen Glynn and Steven Christensen and Jonathan Mann and Bobby To and Kannan Ramanathan and Rommel Noufi and Furtak, {Thomas E.} and Dean Levi",

note = "See CP-5200-54128 for preprint; 38th IEEE Photovoltaic Specialists Conference, PVSC 2012 ; Conference date: 03-06-2012 Through 08-06-2012",

year = "2012",

doi = "10.1109/PVSC.2012.6317896",

language = "American English",

pages = "1580--1583",

}

Li, J, Glynn, S, Christensen, S, Mann, J, To, B, Ramanathan, K, Noufi, R, Furtak, TE & Levi, D 2012, 'Optical Properties of Zn(O,S) Thin Films Deposited by RF Sputtering, Atomic Layer Deposition, and Chemical Bath Deposition', Paper presented at 38th IEEE Photovoltaic Specialists Conference, PVSC 2012, Austin, TX, United States, 3/06/12 - 8/06/12 pp. 1580-1583. https://doi.org/10.1109/PVSC.2012.6317896, https://doi.org/10.1109/PVSC.2012.6317896

TY - CONF

T1 - Optical Properties of Zn(O,S) Thin Films Deposited by RF Sputtering, Atomic Layer Deposition, and Chemical Bath Deposition

AU - Li, Jian

AU - Glynn, Stephen

AU - Christensen, Steven

AU - Mann, Jonathan

AU - To, Bobby

AU - Ramanathan, Kannan

AU - Noufi, Rommel

AU - Furtak, Thomas E.

AU - Levi, Dean

N1 - See CP-5200-54128 for preprint

PY - 2012

Y1 - 2012

N2 - Zn(O,S) thin films 27 - 100 nm thick were deposited on glass or Cu(In xGa1-x)Se2/Molybdenum/glass with RF sputtering, atomic layer deposition, and chemical bath deposition. The complex dielectric functions ε of these films were extracted by spectroscopic ellipsometry and transmission analyses. It is found that varies on a large scale, indicative of significant variations in the films' chemical and physical properties, with the growth methods and deposition parameters. By fitting the spectra based on the parabolic band approximation, the E0 critical point energies and broadening parameters were quantified to provide insights on the band gap, defect density, and phase segregation.

AB - Zn(O,S) thin films 27 - 100 nm thick were deposited on glass or Cu(In xGa1-x)Se2/Molybdenum/glass with RF sputtering, atomic layer deposition, and chemical bath deposition. The complex dielectric functions ε of these films were extracted by spectroscopic ellipsometry and transmission analyses. It is found that varies on a large scale, indicative of significant variations in the films' chemical and physical properties, with the growth methods and deposition parameters. By fitting the spectra based on the parabolic band approximation, the E0 critical point energies and broadening parameters were quantified to provide insights on the band gap, defect density, and phase segregation.

KW - dielectric constant

KW - ellipsometry

KW - nanocrystals

KW - photovoltaic cells

KW - thin films

KW - wide band gap semiconductors

KW - Zinc compounds

UR - http://www.scopus.com/inward/record.url?scp=84869398008&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2012.6317896

DO - 10.1109/PVSC.2012.6317896

M3 - Paper

AN - SCOPUS:84869398008

SP - 1580

EP - 1583

T2 - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012

Y2 - 3 June 2012 through 8 June 2012

ER -

Optical Properties of Zn(O,S) Thin Films Deposited by RF Sputtering, Atomic Layer Deposition, and Chemical Bath Deposition

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

UN SDGs

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