Optical Transitions in the Isoelectronically Doped Semiconductor GaP:N: An Evolution from Isolated Centers, Pairs, and Clusters to an Impurity Band

doi:10.1103/PhysRevB.62.4493

Optical Transitions in the Isoelectronically Doped Semiconductor GaP:N: An Evolution from Isolated Centers, Pairs, and Clusters to an Impurity Band

Chemistry and Nanoscience

Research output: Contribution to journal › Article › peer-review

Original language	American English
Pages (from-to)	4493-4500
Number of pages	8
Journal	Physical Review B
Volume	62
Issue number	7
DOIs	https://doi.org/10.1103/PhysRevB.62.4493
State	Published - 2000

NREL Publication Number

NREL/JA-590-29078

Access to Document

10.1103/PhysRevB.62.4493

Cite this

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title = "Optical Transitions in the Isoelectronically Doped Semiconductor GaP:N: An Evolution from Isolated Centers, Pairs, and Clusters to an Impurity Band",

author = "NREL",

year = "2000",

doi = "10.1103/PhysRevB.62.4493",

language = "American English",

volume = "62",

pages = "4493--4500",

journal = "Physical Review B",

issn = "0163-1829",

publisher = "American Institute of Physics",

number = "7",

}

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T1 - Optical Transitions in the Isoelectronically Doped Semiconductor GaP:N: An Evolution from Isolated Centers, Pairs, and Clusters to an Impurity Band

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PY - 2000

Y1 - 2000

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DO - 10.1103/PhysRevB.62.4493

M3 - Article

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VL - 62

SP - 4493

EP - 4500

JO - Physical Review B

JF - Physical Review B

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