Optimization of Buffer Layers for Lattice-Mismatched Epitaxy of GaxIn1-xAs/InAsyP1-y Double-Heterostructures on InP

S. P. Ahrenkiel, M. W. Wanlass, J. J. Carapella, R. K. Ahrenkiel, S. W. Johnston, L. M. Gedvilas

Research output: Contribution to journalArticlepeer-review

32 Scopus Citations

Abstract

We optimize InAsyP1-y buffer layers and compositional grades for lattice-mismatched heteroepitaxy of GaxIn1-xAs/InAsyP1-y double-heterostructures on InP. The strains of the active and buffer layers depend on the bulk misfit difference between these layers. The misfit difference is adjusted to eliminate strain in the active layer, thus avoiding misfit dislocations and surface topography that would otherwise form to relieve strain. The optimized structure uses an "overshoot" with respect to the conventional design in the misfit and As composition of the InAsyP1-y buffer. Nearly optimized heterostructures typically show excellent structural quality and extended minority-carrier lifetimes.

Original languageAmerican English
Pages (from-to)908-918
Number of pages11
JournalSolar Energy Materials and Solar Cells
Volume91
Issue number10
DOIs
StatePublished - 2007

NREL Publication Number

  • NREL/JA-520-41775

Keywords

  • Chemical vapor deposition
  • Diffraction
  • Epitaxy of thin films
  • Indium phosphide
  • Semiconductors
  • Transmission electron microscopy

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