Abstract
We report on enhancements to CuGaSe2 film quality and their application to photovoltaic devices with high-voltage and low-current outputs, Using co-evaporation from elemental sources for film growth, we study deposition parameters such as substrate temperature and selenium overpressure to investigate their effect on film quality and device performance. Similar to CuInSe2 materials, high Se overpressures change structural aspects of the CuGaSe2 films, particularly those related to preferred orientation. Additionally, the use of higher substrate temperatures (>600°C), also leads to significant changes on film morphology, optoelectronic properties, and device performance.
Original language | American English |
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Pages | 2864-2868 |
Number of pages | 5 |
State | Published - 2003 |
Event | 3rd World Conference on Photovoltaic Energy Conversion (WCPEC-3): Joint Conference of 13th PV Science and Engineering Conference, 30th IEEE PV Specialists Conference, and 18th European PV Solar Energy Conference - Osaka, Japan Duration: 11 May 2003 → 18 May 2003 |
Conference
Conference | 3rd World Conference on Photovoltaic Energy Conversion (WCPEC-3): Joint Conference of 13th PV Science and Engineering Conference, 30th IEEE PV Specialists Conference, and 18th European PV Solar Energy Conference |
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City | Osaka, Japan |
Period | 11/05/03 → 18/05/03 |
NREL Publication Number
- NREL/CP-520-34027