Abstract
In this work we report on studies of four different lasers for scribing of thin-film photovoltaic materials including CdTe, CIS, SnO/sub 2/, AnO, and Mo. We have used cw-lamp-pumped and flashlight-pumped Nd: YAG lasers (.lambda.=532/1064 nm), a copper-vapor laser (511/578 nm, and an XeCl-excimer laser (308nm), with pulse durations ranging from 180 nsec down to 8 nsec. The purpose of this work isto identify the effects of laser wavelength and laser pulse duration on the most effective energy utilization and on the quality of the scribe line. Ablation spots and scribe lines were examined by optical microscopy and stylus profilometry. The ablation threshold has been identified for the combinations of four lasers and five materials. The energy density for optimum removal of material hasbeen identified for two of the laser systems (three wavelengths).
Original language | American English |
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Pages | 769-772 |
Number of pages | 4 |
DOIs | |
State | Published - 1996 |
Event | Twenty Fifth IEEE Photovoltaic Specialists Conference - Washington, D.C. Duration: 13 May 1996 → 17 May 1996 |
Conference
Conference | Twenty Fifth IEEE Photovoltaic Specialists Conference |
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City | Washington, D.C. |
Period | 13/05/96 → 17/05/96 |
Bibliographical note
Work performed by the University of Toledo, Toledo, OhioNREL Publication Number
- NREL/CP-22398