Optimization of Laser Scribing for Thin-Film Photovoltaics

    Research output: Contribution to conferencePaper


    In this work we report on studies of four different lasers for scribing of thin-film photovoltaic materials including CdTe, CIS, SnO/sub 2/, AnO, and Mo. We have used cw-lamp-pumped and flashlight-pumped Nd: YAG lasers (.lambda.=532/1064 nm), a copper-vapor laser (511/578 nm, and an XeCl-excimer laser (308nm), with pulse durations ranging from 180 nsec down to 8 nsec. The purpose of this work isto identify the effects of laser wavelength and laser pulse duration on the most effective energy utilization and on the quality of the scribe line. Ablation spots and scribe lines were examined by optical microscopy and stylus profilometry. The ablation threshold has been identified for the combinations of four lasers and five materials. The energy density for optimum removal of material hasbeen identified for two of the laser systems (three wavelengths).
    Original languageAmerican English
    Number of pages4
    StatePublished - 1996
    EventTwenty Fifth IEEE Photovoltaic Specialists Conference - Washington, D.C.
    Duration: 13 May 199617 May 1996


    ConferenceTwenty Fifth IEEE Photovoltaic Specialists Conference
    CityWashington, D.C.

    Bibliographical note

    Work performed by the University of Toledo, Toledo, Ohio

    NREL Publication Number

    • NREL/CP-22398


    Dive into the research topics of 'Optimization of Laser Scribing for Thin-Film Photovoltaics'. Together they form a unique fingerprint.

    Cite this