Abstract
The use of oxide materials as a hole transport layers (HTL) offers the opportunity to optimize hole collection in a bulk heterojunction organic photovoltaic (OPV) device. We discuss the use of NiOx deposited by three different methods, pulsed laser deposition, sputtering and a solution precursor as an alternative to the standard OPV HTL. We also examine the ability of the HTL to improve device performance in a bulk heterojunction device utilizing a donor that has a deeper highest occupied molecular orbital (HOMO) level.
Original language | American English |
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Pages | 102-104 |
Number of pages | 3 |
DOIs | |
State | Published - 2010 |
Event | 35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States Duration: 20 Jun 2010 → 25 Jun 2010 |
Conference
Conference | 35th IEEE Photovoltaic Specialists Conference, PVSC 2010 |
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Country/Territory | United States |
City | Honolulu, HI |
Period | 20/06/10 → 25/06/10 |
NREL Publication Number
- NREL/CP-520-47743
Keywords
- cell efficiency
- device performance
- solar cells