Optimization of RF-Sputtered ITO Films for High NIR Transparency at Low Deposition Temperature

J. Zhou, X. Wu, T. A. Gessert, Y. Yan, G. Teeter, H. R. Moutinho

Research output: Contribution to conferencePaperpeer-review

3 Scopus Citations

Abstract

Sn-doped indium oxide (ITO) films deposited at temperatures <250°C by r.f. magnetron sputtering are investigated for use as transparent back-contact electrodes to CdS/CdTe top cells in two-junction, mechanically stacked tandem-cell designs. Results show that carrier mobility increases with substrate temperature while beneficial changes in carrier activation occurs at a substrate temperature ∼230°C. Small additions of oxygen to the sputtering environment are effective at reducing near infrared (NIR) absorption. Control of these deposition parameters has produced ITO films with NIR absorption (860-1300 nm) < 10%, and electrical resistivity of <1×10-3 ohm-cm.

Original languageAmerican English
Pages387-392
Number of pages6
DOIs
StatePublished - 2005
EventThin-Film Compound Semiconductor Photovoltaics: Materials Research Society Symposium - San Francisco, California
Duration: 29 Mar 20051 Apr 2005

Conference

ConferenceThin-Film Compound Semiconductor Photovoltaics: Materials Research Society Symposium
CitySan Francisco, California
Period29/03/051/04/05

NREL Publication Number

  • NREL/CP-520-37794

Keywords

  • CdS/CdTe
  • high NIR transparency
  • ITO thin films
  • low deposition
  • multiple-junction PV cells
  • tandem solar cells

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