Abstract
Sn-doped indium oxide (ITO) films deposited at temperatures <250°C by r.f. magnetron sputtering are investigated for use as transparent back-contact electrodes to CdS/CdTe top cells in two-junction, mechanically stacked tandem-cell designs. Results show that carrier mobility increases with substrate temperature while beneficial changes in carrier activation occurs at a substrate temperature ∼230°C. Small additions of oxygen to the sputtering environment are effective at reducing near infrared (NIR) absorption. Control of these deposition parameters has produced ITO films with NIR absorption (860-1300 nm) < 10%, and electrical resistivity of <1×10-3 ohm-cm.
Original language | American English |
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Pages | 387-392 |
Number of pages | 6 |
DOIs | |
State | Published - 2005 |
Event | Thin-Film Compound Semiconductor Photovoltaics: Materials Research Society Symposium - San Francisco, California Duration: 29 Mar 2005 → 1 Apr 2005 |
Conference
Conference | Thin-Film Compound Semiconductor Photovoltaics: Materials Research Society Symposium |
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City | San Francisco, California |
Period | 29/03/05 → 1/04/05 |
NREL Publication Number
- NREL/CP-520-37794
Keywords
- CdS/CdTe
- high NIR transparency
- ITO thin films
- low deposition
- multiple-junction PV cells
- tandem solar cells