Optimization of RF-Sputtered ITO Films for High NIR Transparency at Low Deposition Temperature

J. Zhou; X. Wu; T. A. Gessert; Y. Yan; G. Teeter; H. R. Moutinho

doi:10.1557/proc-865-f14.4

Optimization of RF-Sputtered ITO Films for High NIR Transparency at Low Deposition Temperature

J. Zhou
, X. Wu
, T. A. Gessert
, Y. Yan
, G. Teeter
, H. R. Moutinho

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

3 Scopus Citations

Abstract

Sn-doped indium oxide (ITO) films deposited at temperatures <250°C by r.f. magnetron sputtering are investigated for use as transparent back-contact electrodes to CdS/CdTe top cells in two-junction, mechanically stacked tandem-cell designs. Results show that carrier mobility increases with substrate temperature while beneficial changes in carrier activation occurs at a substrate temperature ∼230°C. Small additions of oxygen to the sputtering environment are effective at reducing near infrared (NIR) absorption. Control of these deposition parameters has produced ITO films with NIR absorption (860-1300 nm) < 10%, and electrical resistivity of <1×10^-3 ohm-cm.

Original language	American English
Pages	387-392
Number of pages	6
DOIs	https://doi.org/10.1557/proc-865-f14.4
State	Published - 2005
Event	Thin-Film Compound Semiconductor Photovoltaics: Materials Research Society Symposium - San Francisco, California Duration: 29 Mar 2005 → 1 Apr 2005

Conference

Conference	Thin-Film Compound Semiconductor Photovoltaics: Materials Research Society Symposium
City	San Francisco, California
Period	29/03/05 → 1/04/05

NLR Publication Number

NREL/CP-520-37794

Keywords

CdS/CdTe
high NIR transparency
ITO thin films
low deposition
multiple-junction PV cells
tandem solar cells

Access to Document

10.1557/proc-865-f14.4

Cite this

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title = "Optimization of RF-Sputtered ITO Films for High NIR Transparency at Low Deposition Temperature",

abstract = "Sn-doped indium oxide (ITO) films deposited at temperatures <250°C by r.f. magnetron sputtering are investigated for use as transparent back-contact electrodes to CdS/CdTe top cells in two-junction, mechanically stacked tandem-cell designs. Results show that carrier mobility increases with substrate temperature while beneficial changes in carrier activation occurs at a substrate temperature ∼230°C. Small additions of oxygen to the sputtering environment are effective at reducing near infrared (NIR) absorption. Control of these deposition parameters has produced ITO films with NIR absorption (860-1300 nm) < 10\%, and electrical resistivity of <1×10-3 ohm-cm.",

keywords = "CdS/CdTe, high NIR transparency, ITO thin films, low deposition, multiple-junction PV cells, tandem solar cells",

author = "J. Zhou and X. Wu and Gessert, \{T. A.\} and Y. Yan and G. Teeter and Moutinho, \{H. R.\}",

year = "2005",

doi = "10.1557/proc-865-f14.4",

language = "American English",

pages = "387--392",

note = "Thin-Film Compound Semiconductor Photovoltaics: Materials Research Society Symposium ; Conference date: 29-03-2005 Through 01-04-2005",

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T1 - Optimization of RF-Sputtered ITO Films for High NIR Transparency at Low Deposition Temperature

AU - Zhou, J.

AU - Wu, X.

AU - Gessert, T. A.

AU - Yan, Y.

AU - Teeter, G.

AU - Moutinho, H. R.

PY - 2005

Y1 - 2005

N2 - Sn-doped indium oxide (ITO) films deposited at temperatures <250°C by r.f. magnetron sputtering are investigated for use as transparent back-contact electrodes to CdS/CdTe top cells in two-junction, mechanically stacked tandem-cell designs. Results show that carrier mobility increases with substrate temperature while beneficial changes in carrier activation occurs at a substrate temperature ∼230°C. Small additions of oxygen to the sputtering environment are effective at reducing near infrared (NIR) absorption. Control of these deposition parameters has produced ITO films with NIR absorption (860-1300 nm) < 10%, and electrical resistivity of <1×10-3 ohm-cm.

AB - Sn-doped indium oxide (ITO) films deposited at temperatures <250°C by r.f. magnetron sputtering are investigated for use as transparent back-contact electrodes to CdS/CdTe top cells in two-junction, mechanically stacked tandem-cell designs. Results show that carrier mobility increases with substrate temperature while beneficial changes in carrier activation occurs at a substrate temperature ∼230°C. Small additions of oxygen to the sputtering environment are effective at reducing near infrared (NIR) absorption. Control of these deposition parameters has produced ITO films with NIR absorption (860-1300 nm) < 10%, and electrical resistivity of <1×10-3 ohm-cm.

KW - CdS/CdTe

KW - high NIR transparency

KW - ITO thin films

KW - low deposition

KW - multiple-junction PV cells

KW - tandem solar cells

UR - https://www.scopus.com/pages/publications/30544452647

U2 - 10.1557/proc-865-f14.4

DO - 10.1557/proc-865-f14.4

M3 - Paper

AN - SCOPUS:30544452647

SP - 387

EP - 392

T2 - Thin-Film Compound Semiconductor Photovoltaics: Materials Research Society Symposium

Y2 - 29 March 2005 through 1 April 2005

ER -

Optimization of RF-Sputtered ITO Films for High NIR Transparency at Low Deposition Temperature

Abstract

Conference

NLR Publication Number

Keywords

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