Optimization of Source Material for in-situ Arsenic Doping via Vapor Transport Deposition of CdTe Films

Seth W. McPherson, Tawfeeq Al-Hamdi, Joel N. Duenow, X. Zheng, David S. Albin, Tursun Ablekim, Eric Colegrove, Mahisha Amarasinghe, Wyatt K. Metzger, Santosh K. Swain, Kelvin G. Lynn

Research output: Contribution to conferencePaperpeer-review

Abstract

In-situ doping of CdTe/CdSeTe films with arsenic is performed using pre-doped source material prepared by high pressure Bridgman (HPB) melt growth. Arsenic level in the source material is varied from 1018-1020 cm-3. Correspondingly, dopant incorporation in the films prepared using vapor transport deposition (VTD) varied from 3×1017 cm-3-1×1018cm-3. In this range, dopant activation is found to inversely correlate with the dopant incorporation, suggesting compensation. The results from this study indicate film properties can be adjusted by source material.

Original languageAmerican English
Pages1913-1915
Number of pages3
DOIs
StatePublished - 14 Jun 2020
Event47th IEEE Photovoltaic Specialists Conference, PVSC 2020 - Calgary, Canada
Duration: 15 Jun 202021 Aug 2020

Conference

Conference47th IEEE Photovoltaic Specialists Conference, PVSC 2020
Country/TerritoryCanada
CityCalgary
Period15/06/2021/08/20

Bibliographical note

Publisher Copyright:
© 2020 IEEE.

NREL Publication Number

  • NREL/CP-5K00-77108

Keywords

  • CdSeTe
  • CdTe
  • dopants
  • photovoltaics
  • solar cells

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