Abstract
In-situ doping of CdTe/CdSeTe films with arsenic is performed using pre-doped source material prepared by high pressure Bridgman (HPB) melt growth. Arsenic level in the source material is varied from 1018-1020 cm-3. Correspondingly, dopant incorporation in the films prepared using vapor transport deposition (VTD) varied from 3×1017 cm-3-1×1018cm-3. In this range, dopant activation is found to inversely correlate with the dopant incorporation, suggesting compensation. The results from this study indicate film properties can be adjusted by source material.
Original language | American English |
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Pages | 1913-1915 |
Number of pages | 3 |
DOIs | |
State | Published - 14 Jun 2020 |
Event | 47th IEEE Photovoltaic Specialists Conference, PVSC 2020 - Calgary, Canada Duration: 15 Jun 2020 → 21 Aug 2020 |
Conference
Conference | 47th IEEE Photovoltaic Specialists Conference, PVSC 2020 |
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Country/Territory | Canada |
City | Calgary |
Period | 15/06/20 → 21/08/20 |
Bibliographical note
Publisher Copyright:© 2020 IEEE.
NREL Publication Number
- NREL/CP-5K00-77108
Keywords
- CdSeTe
- CdTe
- dopants
- photovoltaics
- solar cells