Optimization of Source Material for in-situ Arsenic Doping via Vapor Transport Deposition of CdTe Films

Seth W. McPherson; Tawfeeq Al-Hamdi; Joel N. Duenow; X. Zheng; David S. Albin; Tursun Ablekim; Eric Colegrove; Mahisha Amarasinghe; Wyatt K. Metzger; Santosh K. Swain; Kelvin G. Lynn

doi:10.1109/PVSC45281.2020.9300719

Optimization of Source Material for in-situ Arsenic Doping via Vapor Transport Deposition of CdTe Films

Seth W. McPherson
, Tawfeeq Al-Hamdi
, Joel N. Duenow
, X. Zheng
, David S. Albin
, Tursun Ablekim
, Eric Colegrove
, Mahisha Amarasinghe
, Wyatt K. Metzger
, Santosh K. Swain
, Kelvin G. Lynn

Materials Science

Research output: Contribution to conference › Paper › peer-review

Abstract

In-situ doping of CdTe/CdSeTe films with arsenic is performed using pre-doped source material prepared by high pressure Bridgman (HPB) melt growth. Arsenic level in the source material is varied from 1018-1020 cm-3. Correspondingly, dopant incorporation in the films prepared using vapor transport deposition (VTD) varied from 3×1017 cm-3-1×1018cm-3. In this range, dopant activation is found to inversely correlate with the dopant incorporation, suggesting compensation. The results from this study indicate film properties can be adjusted by source material.

Original language	American English
Pages	1913-1915
Number of pages	3
DOIs	https://doi.org/10.1109/PVSC45281.2020.9300719 https://doi.org/10.1109/PVSC45281.2020.9300719
State	Published - 14 Jun 2020
Event	47th IEEE Photovoltaic Specialists Conference, PVSC 2020 - Calgary, Canada Duration: 15 Jun 2020 → 21 Aug 2020

Conference

Conference	47th IEEE Photovoltaic Specialists Conference, PVSC 2020
Country/Territory	Canada
City	Calgary
Period	15/06/20 → 21/08/20

Bibliographical note

Publisher Copyright:
© 2020 IEEE.

NLR Publication Number

NREL/CP-5K00-77108

Keywords

CdSeTe
CdTe
dopants
photovoltaics
solar cells

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McPherson, S. W., Al-Hamdi, T., Duenow, J. N., Zheng, X., Albin, D. S., Ablekim, T., Colegrove, E., Amarasinghe, M., Metzger, W. K., Swain, S. K., & Lynn, K. G. (2020). Optimization of Source Material for in-situ Arsenic Doping via Vapor Transport Deposition of CdTe Films. 1913-1915. Paper presented at 47th IEEE Photovoltaic Specialists Conference, PVSC 2020, Calgary, Canada. https://doi.org/10.1109/PVSC45281.2020.9300719, https://doi.org/10.1109/PVSC45281.2020.9300719

@conference{67ac7779c5124beca95fcbd0c2ca8bb4,

title = "Optimization of Source Material for in-situ Arsenic Doping via Vapor Transport Deposition of CdTe Films",

abstract = "In-situ doping of CdTe/CdSeTe films with arsenic is performed using pre-doped source material prepared by high pressure Bridgman (HPB) melt growth. Arsenic level in the source material is varied from 1018-1020 cm-3. Correspondingly, dopant incorporation in the films prepared using vapor transport deposition (VTD) varied from 3×1017 cm-3-1×1018cm-3. In this range, dopant activation is found to inversely correlate with the dopant incorporation, suggesting compensation. The results from this study indicate film properties can be adjusted by source material.",

keywords = "CdSeTe, CdTe, dopants, photovoltaics, solar cells",

author = "McPherson, \{Seth W.\} and Tawfeeq Al-Hamdi and Duenow, \{Joel N.\} and X. Zheng and Albin, \{David S.\} and Tursun Ablekim and Eric Colegrove and Mahisha Amarasinghe and Metzger, \{Wyatt K.\} and Swain, \{Santosh K.\} and Lynn, \{Kelvin G.\}",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 47th IEEE Photovoltaic Specialists Conference, PVSC 2020 ; Conference date: 15-06-2020 Through 21-08-2020",

year = "2020",

month = jun,

day = "14",

doi = "10.1109/PVSC45281.2020.9300719",

language = "American English",

pages = "1913--1915",

}

McPherson, SW, Al-Hamdi, T, Duenow, JN, Zheng, X, Albin, DS, Ablekim, T, Colegrove, E, Amarasinghe, M, Metzger, WK, Swain, SK & Lynn, KG 2020, 'Optimization of Source Material for in-situ Arsenic Doping via Vapor Transport Deposition of CdTe Films', Paper presented at 47th IEEE Photovoltaic Specialists Conference, PVSC 2020, Calgary, Canada, 15/06/20 - 21/08/20 pp. 1913-1915. https://doi.org/10.1109/PVSC45281.2020.9300719, https://doi.org/10.1109/PVSC45281.2020.9300719

TY - CONF

T1 - Optimization of Source Material for in-situ Arsenic Doping via Vapor Transport Deposition of CdTe Films

AU - McPherson, Seth W.

AU - Al-Hamdi, Tawfeeq

AU - Duenow, Joel N.

AU - Zheng, X.

AU - Albin, David S.

AU - Ablekim, Tursun

AU - Colegrove, Eric

AU - Amarasinghe, Mahisha

AU - Metzger, Wyatt K.

AU - Swain, Santosh K.

AU - Lynn, Kelvin G.

PY - 2020/6/14

Y1 - 2020/6/14

N2 - In-situ doping of CdTe/CdSeTe films with arsenic is performed using pre-doped source material prepared by high pressure Bridgman (HPB) melt growth. Arsenic level in the source material is varied from 1018-1020 cm-3. Correspondingly, dopant incorporation in the films prepared using vapor transport deposition (VTD) varied from 3×1017 cm-3-1×1018cm-3. In this range, dopant activation is found to inversely correlate with the dopant incorporation, suggesting compensation. The results from this study indicate film properties can be adjusted by source material.

AB - In-situ doping of CdTe/CdSeTe films with arsenic is performed using pre-doped source material prepared by high pressure Bridgman (HPB) melt growth. Arsenic level in the source material is varied from 1018-1020 cm-3. Correspondingly, dopant incorporation in the films prepared using vapor transport deposition (VTD) varied from 3×1017 cm-3-1×1018cm-3. In this range, dopant activation is found to inversely correlate with the dopant incorporation, suggesting compensation. The results from this study indicate film properties can be adjusted by source material.

KW - CdSeTe

KW - CdTe

KW - dopants

KW - photovoltaics

KW - solar cells

UR - https://www.scopus.com/pages/publications/85099536742

U2 - 10.1109/PVSC45281.2020.9300719

DO - 10.1109/PVSC45281.2020.9300719

M3 - Paper

AN - SCOPUS:85099536742

SP - 1913

EP - 1915

T2 - 47th IEEE Photovoltaic Specialists Conference, PVSC 2020

Y2 - 15 June 2020 through 21 August 2020

ER -

Optimization of Source Material for in-situ Arsenic Doping via Vapor Transport Deposition of CdTe Films

Abstract

Conference

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Keywords

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