Optimized III-V Multijunction Concentrator Solar Cells on Patterned Si and Ge Substrates: Final Technical Report, 15 September 2004--30 September 2006

Optimized III-V Multijunction Concentrator Solar Cells on Patterned Si and Ge Substrates: Final Technical Report, 15 September 2004--30 September 2006

Research output: NREL › Subcontract Report

Abstract

Goal is to demo realistic path to III-V multijunction concentrator efficiencies > 40% by substrate-engineering combining compositional grading with patterned epitaxy for small-area cells for high concentration.

Original language	American English
Number of pages	12
State	Published - 2008

Bibliographical note

Work performed by The Ohio State University, Columbus, Ohio

NREL Publication Number

NREL/SR-520-44250

Keywords

compositional grading
dual junction
GE Subtrate
III-V multijunction concentrator
InGaP/InGaAs
lattice match
patterned Si:Ge/Si
PV
small area
solar cells
thermal conductivity

Access to Document

https://www.nrel.gov/docs/fy09osti/44250.pdf

Cite this

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title = "Optimized III-V Multijunction Concentrator Solar Cells on Patterned Si and Ge Substrates: Final Technical Report, 15 September 2004--30 September 2006",

abstract = "Goal is to demo realistic path to III-V multijunction concentrator efficiencies > 40% by substrate-engineering combining compositional grading with patterned epitaxy for small-area cells for high concentration.",

keywords = "compositional grading, dual junction, GE Subtrate, III-V multijunction concentrator, InGaP/InGaAs, lattice match, patterned Si:Ge/Si, PV, small area, solar cells, thermal conductivity",

author = "NREL",

note = "Work performed by The Ohio State University, Columbus, Ohio",

year = "2008",

language = "American English",

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T1 - Optimized III-V Multijunction Concentrator Solar Cells on Patterned Si and Ge Substrates: Final Technical Report, 15 September 2004--30 September 2006

AU - NREL, null

N1 - Work performed by The Ohio State University, Columbus, Ohio

PY - 2008

Y1 - 2008

N2 - Goal is to demo realistic path to III-V multijunction concentrator efficiencies > 40% by substrate-engineering combining compositional grading with patterned epitaxy for small-area cells for high concentration.

AB - Goal is to demo realistic path to III-V multijunction concentrator efficiencies > 40% by substrate-engineering combining compositional grading with patterned epitaxy for small-area cells for high concentration.

KW - compositional grading

KW - dual junction

KW - GE Subtrate

KW - III-V multijunction concentrator

KW - InGaP/InGaAs

KW - lattice match

KW - patterned Si:Ge/Si

KW - PV

KW - small area

KW - solar cells

KW - thermal conductivity

M3 - Subcontract Report

ER -

Optimized III-V Multijunction Concentrator Solar Cells on Patterned Si and Ge Substrates: Final Technical Report, 15 September 2004--30 September 2006

Abstract

Bibliographical note

NREL Publication Number

Keywords

Access to Document

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Cite this